التفاصيل البيبلوغرافية
| العنوان: |
Electrically pumped edge-emitting photonic bandgap semiconductor laser |
| المؤلفون: |
LIN, SHAWN-YU, ZUBRZYCKI, WALTER J. |
| المساهمون: |
NATIONAL TECHNOLOGY & ENGINEERING SOLUTIONS OF SANDIA, LLC |
| سنة النشر: |
2004 |
| المجموعة: |
Xi'an Institute of Optics and Precision Mechanics: OPT OpenIR (Chinese Academy of Sciences, CAS) / 中国科学院西安光学精密机械研究所机构知识库 |
| مصطلحات موضوعية: |
H01S5/00 | H01S5/10 | H01S5/34 |
| جغرافية الموضوع: |
美国 |
| الوصف: |
A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
unknown |
| Relation: |
http://ir.opt.ac.cn/handle/181661/45753 |
| الاتاحة: |
http://ir.opt.ac.cn/handle/181661/45753 |
| Rights: |
cn.org.cspace.api.content.CopyrightPolicy@47ab81a2 |
| رقم الانضمام: |
edsbas.7FD26B74 |
| قاعدة البيانات: |
BASE |