Academic Journal
Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature
| العنوان: | Encapsulation Effects on Ge‐Rich GeSbTe Phase‐Change Materials at High Temperature |
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| المؤلفون: | Daoudi, Oumaima, Nolot, Emmanuel, Dartois, Mélanie, Tessaire, Magali, Aussenac, François, Bernier, Nicolas, Gauthier, Nicolas, Rochat, Névine, Fillot, Frédéric, Le, Van‐hoan, Renevier, Hubert, Navarro, Gabriele |
| المساهمون: | Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire des matériaux et du génie physique (LMGP ), Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA)-Université Grenoble Alpes (UGA), ANR-09-RTBA-0002,RTB 2009 (ANR-09-RTBA-0002),Recherche Technologique de Base(2009), European Project: 101007321,H2020-ECSEL-2020-1-IA-two-stage,StorAIge, European Project |
| المصدر: | ISSN: 1862-6254. |
| بيانات النشر: | HAL CCSD Wiley-VCH Verlag |
| سنة النشر: | 2024 |
| المجموعة: | Université Grenoble Alpes: HAL |
| مصطلحات موضوعية: | Phase-Change Memory PCM, Ge-rich GeSbTe, Encapsulation, Interfaces, High temperature, [SPI]Engineering Sciences [physics] |
| الوصف: | published by Wiley-VCH GmbHPhys. Status Solidi RRL2024, 2300448https://onlinelibrary.wiley.com/doi/epdf/10.1002/pssr.202300448 ; International audience ; Ge‐rich GeSbTe chalcogenide alloys have gained significant attention in the field of phase‐change materials due to their remarkable thermal stability and thus their suitability for integration in nonvolatile memories targeting embedded automotive applications. Herein, the effects of different encapsulating materials on the evolution and on the crystallization kinetic of N‐doped Ge‐rich GeSbTe films are focused on. These films are annealed with temperatures compatible with the back‐end‐of‐line of the complementary metal‐oxide‐semiconductor (CMOS) fabrication. First, it shows how the encapsulation layer thickness should be tuned in order to protect the layer from oxidation and at the same time to avoid delamination phenomena. TaN, C, TiN, SiC, and SiN used as encapsulating layers are compared. The segregation and crystallization of Ge‐rich GeSbTe alloys appear more homogeneous in the case of C, TiN, and SiC. On the contrary, the effects of an interfacial heterogeneous nucleation in the case of TaN and SiN are observed. It results in a different final morphology of the chalcogenide layer after annealing depending on the encapsulation, with different grain sizes and kinetic of phase separation. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | info:eu-repo/grantAgreement//101007321/EU/Embedded storage elements on next MCU generation ready for AI on the edge/StorAIge; hal-04493833; https://hal.science/hal-04493833; https://hal.science/hal-04493833/document; https://hal.science/hal-04493833/file/Encapsulation%20Effects.pdf |
| DOI: | 10.1002/pssr.202300448 |
| الاتاحة: | https://hal.science/hal-04493833 https://hal.science/hal-04493833/document https://hal.science/hal-04493833/file/Encapsulation%20Effects.pdf https://doi.org/10.1002/pssr.202300448 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.7DD22667 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1002/pssr.202300448 |
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