التفاصيل البيبلوغرافية
| العنوان: |
Effect of AlN and AlGaN Interlayers on AlScN/GaN Heterostructures Grown by Metal–Organic Chemical Vapor Deposition |
| المؤلفون: |
Isabel Streicher (14332633), Stefano Leone (208483), Christian Manz (13821956), Lutz Kirste (14332636), Mario Prescher (14332639), Patrick Waltereit (14332642), Michael Mikulla (14332645), Rüdiger Quay (14332648), Oliver Ambacher (1599169) |
| سنة النشر: |
2023 |
| مصطلحات موضوعية: |
Biophysics, Biochemistry, Medicine, Cell Biology, Biotechnology, Ecology, Immunology, Plant Biology, Physical Sciences not elsewhere classified, sheet resistance (<, 98 × 10, 900 ° c, 52 × 10, 25 × 10, 1200 ° c, dimensional electron gas, nominal aln interlayer, aln interlayer increases, gan heterostructures suitable, graded algan interlayer, electron mobility transistors, sh , barrier growth temperature, ), 13 , gan heterostructures grown, graded algan interlayers, gan heterostructures, electron mobility, |
| الوصف: |
AlScN/GaN heterostructures with their high sheet carrier density ( n s ) in the two-dimensional electron gas (2DEG) have a high potential for high-frequency and high-power electronics. The abruptness of the heterointerface plays a key role in the 2DEG confinement, and the presence of interlayers (AlN, AlGaN) affects n s and electron mobility (μ) and determines the sheet resistance ( R sh ). AlScN/GaN heterostructures suitable for high-electron mobility transistors (HEMT) with and without a nominal AlN interlayer were grown by metal–organic chemical vapor deposition (MOCVD) and characterized electrically and structurally to gain a systematic insight into the unintentional formation and control of graded AlGaN interlayers by diffusion of atoms at the heterointerface. The AlN interlayer increases n s from 2.52 × 10 13 cm –2 to 3.25 × 10 13 cm –2 and, as calculated by one-dimensional Schrödinger–Poisson simulations, improves the 2DEG confinement. The barrier growth temperature was varied from 900 °C to 1200 °C to investigate the effect of the thermal budget on diffusion. Growth at 900 °C reduces the thickness of the graded AlGaN interlayer and improves the 2DEG confinement, leading to R sh of 211 Ω/sq, n s of 2.98 × 10 13 cm –2 , and μ of 998 cm 2 /(Vs). |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| Relation: |
https://figshare.com/articles/journal_contribution/Effect_of_AlN_and_AlGaN_Interlayers_on_AlScN_GaN_Heterostructures_Grown_by_Metal_Organic_Chemical_Vapor_Deposition/21821260 |
| DOI: |
10.1021/acs.cgd.2c01013.s001 |
| الاتاحة: |
https://doi.org/10.1021/acs.cgd.2c01013.s001 |
| Rights: |
CC BY-NC 4.0 |
| رقم الانضمام: |
edsbas.7C82EC31 |
| قاعدة البيانات: |
BASE |