Academic Journal
Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers
| العنوان: | Microstructural, Compositional & Optical Characteristics of GaN Grown by MOVPE on ZnO Epilayers |
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| المؤلفون: | Rogers, Dave, J., Hosseini-Teherani, Ferecteh, Moudakir, Tarik, Gautier, Simon, Jomard, François, Molinari, Michaël, Troyon, Michel, Mcgrouther, Damien, Chapman, John, N., Razeghi, Manijeh, Ougazzaden, Abdallah |
| المساهمون: | Nanovation SARL, Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC), Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), CentraleSupélec-Université de Lorraine (UL), Groupe d'Etude de la Matière Condensée (GEMAC), Université de Versailles Saint-Quentin-en-Yvelines (UVSQ)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de Microscopies et d'Etude de Nanostructures (lmen), Université de Reims Champagne-Ardenne (URCA), University of Glasgow, Center for Quantum Devices Evanston (CQD), Northwestern University Evanston, School of Electrical and Computer Engineering - Georgia Insitute of Technology (ECE GeorgiaTech), Georgia Institute of Technology Atlanta |
| المصدر: | ISSN: 2166-2746. |
| بيانات النشر: | HAL CCSD AVS through the American Institute of Physics |
| سنة النشر: | 2009 |
| المجموعة: | Université de Versailles Saint-Quentin-en-Yvelines: HAL-UVSQ |
| مصطلحات موضوعية: | [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] |
| الوصف: | International audience ; This article presents the results of microstructural, compositional, and optical characterization of GaN films grown on ZnO buffered c-sapphire substrates. Transmission electron microscopy showed epitaxy between the GaN and the ZnO, no degradation of the ZnO buffer layer, and no evidence of any interfacial compounds. Secondary ion mass spectroscopy revealed negligible Zn signal in the GaN layer away from the GaN∕ZnO interface. After chemical removal of the ZnO, room temperature (RT) cathodoluminescence spectra had a single main peak centered at ∼368nm (∼3.37eV), which was indexed as near-band-edge (NBE) emission from the GaN layer. There was no evidence of the ZnO NBE peak, centered at ∼379nm (∼3.28eV), which had been observed in RT photoluminescence spectra prior to removal of the ZnO. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-00448880; https://hal.science/hal-00448880; https://hal.science/hal-00448880/document; https://hal.science/hal-00448880/file/Rogers2009.pdf |
| DOI: | 10.1116/1.3137967 |
| الاتاحة: | https://hal.science/hal-00448880 https://hal.science/hal-00448880/document https://hal.science/hal-00448880/file/Rogers2009.pdf https://doi.org/10.1116/1.3137967 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.7A6FA0E |
| قاعدة البيانات: | BASE |
| DOI: | 10.1116/1.3137967 |
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