Academic Journal
measurements and simulations*
| العنوان: | measurements and simulations* |
|---|---|
| المؤلفون: | J. R. M. Luchies A, J. F. Verweij A |
| المساهمون: | The Pennsylvania State University CiteSeerX Archives |
| المصدر: | http://doc.utwente.nl/15186/1/Luchies95fast.pdf. |
| سنة النشر: | 1995 |
| المجموعة: | CiteSeerX |
| مصطلحات موضوعية: | ESD, CDM, HBM, Electro-optical sampling, Simulator, Transient modeling |
| الوصف: | The transient turn-on of the parasitic bipolar transistor of an NMOS transistor was studied. The voltages appearing at internal nodes of protection and functional circuit after application of 350 ps rise-time pulses have been measured using electro-optic sampling. For very fast transients the triggering of the protection transistor shifts from an avalanche multiplication current owards a displacement current-induced triggering, thereby lowering the trigger volt-age. With our circuit simulation mode we are able to predict he outcome of human body model and charged evice model testing. |
| نوع الوثيقة: | text |
| وصف الملف: | application/pdf |
| اللغة: | English |
| Relation: | http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.551.2027; http://doc.utwente.nl/15186/1/Luchies95fast.pdf |
| الاتاحة: | http://citeseerx.ist.psu.edu/viewdoc/summary?doi=10.1.1.551.2027 http://doc.utwente.nl/15186/1/Luchies95fast.pdf |
| Rights: | Metadata may be used without restrictions as long as the oai identifier remains attached to it. |
| رقم الانضمام: | edsbas.789B252A |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |