Academic Journal
Early-stage growth of GeTe on Si(111)-Sb
| العنوان: | Early-stage growth of GeTe on Si(111)-Sb |
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| المؤلفون: | Croes, Boris, Cheynis, Fabien, Fagot-Revurat, Yannick, Müller, Pierre, Curiotto, Stefano, Leroy, Frédéric |
| المساهمون: | Centre Interdisciplinaire de Nanoscience de Marseille (CINaM), Aix Marseille Université (AMU)-Centre National de la Recherche Scientifique (CNRS), Institut Jean Lamour (IJL), Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), ANR-22-CE08-0023,FETh,Contrôle ferroélectrique de la conduction électrique et thermique à l'échelle nanométrique dans GeTe(2022) |
| المصدر: | ISSN: 2475-9953 ; Physical Review Materials ; https://hal.science/hal-04184850 ; Physical Review Materials, 2023, 7 (1), pp.014409. ⟨10.1103/PhysRevMaterials.7.014409⟩. |
| بيانات النشر: | HAL CCSD American Physical Society |
| سنة النشر: | 2023 |
| المجموعة: | Aix-Marseille Université: HAL |
| مصطلحات موضوعية: | [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] |
| الوصف: | International audience ; The advent of germanium telluride as a promising ferroelectric Rashba semiconductor for spintronic applications requires the growth of nanometer-thick films of high crystalline quality. In this study, we have elucidated the initial growth stages of GeTe on Si(111)-Sb by scanning tunneling microscopy and low energy electron diraction. We demonstrate the presence of an initial 0.35 nm-thick GeTe layer followed by the 2D growth of GeTe via Frank-Read sources of atomic steps. As shown by core level spectroscopy, Sb is acting as a surfactant during growth up to a 5 nm thick film. X-ray diffraction, transmission electron microscopy and low energy electron microscopy evidence that numerous mirror domains and in-plane misorientations appear early in the growth process and are gradually buried at the film/substrate interface. The use of a miscut Si substrate close to Si(111) allows suppressing these defects since the early beginning of growth. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-04184850; https://hal.science/hal-04184850; https://hal.science/hal-04184850/document; https://hal.science/hal-04184850/file/GeTe_growth_16_12_2022_1.pdf |
| DOI: | 10.1103/PhysRevMaterials.7.014409 |
| الاتاحة: | https://hal.science/hal-04184850 https://hal.science/hal-04184850/document https://hal.science/hal-04184850/file/GeTe_growth_16_12_2022_1.pdf https://doi.org/10.1103/PhysRevMaterials.7.014409 |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.78389B2D |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/PhysRevMaterials.7.014409 |
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