Academic Journal
Oxygen vacancies trigger rapid charge transport channels at the engineered interface of S-scheme heterojunction for boosting photocatalytic performance
العنوان: | Oxygen vacancies trigger rapid charge transport channels at the engineered interface of S-scheme heterojunction for boosting photocatalytic performance |
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المؤلفون: | Zu, D, Ying, Y, Wei, Q, Xiong, P, Ahmed, MS, Lin, Z, Li, MMJ, Li, M, Xu, Z, Chen, G, Bai, L, She, S, Tsang, YH, Huang, H |
المساهمون: | Department of Applied Physics, Photonics Research Institute, Mainland Development Office |
بيانات النشر: | Wiley-VCH |
سنة النشر: | 2024 |
المجموعة: | Hong Kong Polytechnic University: PolyU Institutional Repository (PolyU IR) |
مصطلحات موضوعية: | Charge transfer, Femtosecond transient absorption spectroscopy, Heterointerface engineering, Oxygen vacancies, S-scheme heterojunction |
الوصف: | 202407 bcwh ; Version of Record ; Others ; Hong Kong Polytechnic University Shenzhen Research Institute; Innovation and Technology Fund; Hong Kong Polytechnic University; Science, Technology and Innovation Commission of Shenzhen Municipality ; Published ; Wiley (2024) ; TA |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
تدمد: | 1433-7851 1521-3773 |
Relation: | http://hdl.handle.net/10397/108251; 63; 31; 2-s2.0-85196810228; e202405756; OA_TA |
DOI: | 10.1002/anie.202405756 |
الاتاحة: | http://hdl.handle.net/10397/108251 https://doi.org/10.1002/anie.202405756 |
Rights: | © 2024 The Authors. Angewandte Chemie International Edition published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. ; The following publication D. Zu, Y. Ying, Q. Wei, P. Xiong, M. S. Ahmed, Z. Lin, M. M.-J. Li, M. Li, Z. Xu, G. Chen, L. Bai, S. She, Y. H. Tsang, H. Huang, Angew. Chem. Int. Ed. 2024, 63, e202405756 is available at https://doi.org/10.1002/anie.202405756. |
رقم الانضمام: | edsbas.7800D436 |
قاعدة البيانات: | BASE |
تدمد: | 14337851 15213773 |
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DOI: | 10.1002/anie.202405756 |