Academic Journal

Oxygen vacancies trigger rapid charge transport channels at the engineered interface of S-scheme heterojunction for boosting photocatalytic performance

التفاصيل البيبلوغرافية
العنوان: Oxygen vacancies trigger rapid charge transport channels at the engineered interface of S-scheme heterojunction for boosting photocatalytic performance
المؤلفون: Zu, D, Ying, Y, Wei, Q, Xiong, P, Ahmed, MS, Lin, Z, Li, MMJ, Li, M, Xu, Z, Chen, G, Bai, L, She, S, Tsang, YH, Huang, H
المساهمون: Department of Applied Physics, Photonics Research Institute, Mainland Development Office
بيانات النشر: Wiley-VCH
سنة النشر: 2024
المجموعة: Hong Kong Polytechnic University: PolyU Institutional Repository (PolyU IR)
مصطلحات موضوعية: Charge transfer, Femtosecond transient absorption spectroscopy, Heterointerface engineering, Oxygen vacancies, S-scheme heterojunction
الوصف: 202407 bcwh ; Version of Record ; Others ; Hong Kong Polytechnic University Shenzhen Research Institute; Innovation and Technology Fund; Hong Kong Polytechnic University; Science, Technology and Innovation Commission of Shenzhen Municipality ; Published ; Wiley (2024) ; TA
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 1433-7851
1521-3773
Relation: http://hdl.handle.net/10397/108251; 63; 31; 2-s2.0-85196810228; e202405756; OA_TA
DOI: 10.1002/anie.202405756
الاتاحة: http://hdl.handle.net/10397/108251
https://doi.org/10.1002/anie.202405756
Rights: © 2024 The Authors. Angewandte Chemie International Edition published by Wiley-VCH GmbH. This is an open access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited. ; The following publication D. Zu, Y. Ying, Q. Wei, P. Xiong, M. S. Ahmed, Z. Lin, M. M.-J. Li, M. Li, Z. Xu, G. Chen, L. Bai, S. She, Y. H. Tsang, H. Huang, Angew. Chem. Int. Ed. 2024, 63, e202405756 is available at https://doi.org/10.1002/anie.202405756.
رقم الانضمام: edsbas.7800D436
قاعدة البيانات: BASE
الوصف
تدمد:14337851
15213773
DOI:10.1002/anie.202405756