Academic Journal
Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique
| العنوان: | Characteristics of InGaN/AlN heterostructure grown by using MOCVD technique |
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| المؤلفون: | Yusof, Ahmad Sauffi, Hassan, Zainuriah, Ng, Sha Shiong, Ahmad, Mohd Anas, Lim, Way Foong, Hamady, Sidi Ould Saad, Fressengeas, Nicolas |
| المساهمون: | Institut Jean Lamour (IJL), Institut de Chimie - CNRS Chimie (INC-CNRS)-Université de Lorraine (UL)-Centre National de la Recherche Scientifique (CNRS), Université de Lorraine (UL), Ministère de l'Enseignement supérieur, de la Recherche et de l'Innovation (MESRI), Programme Interdisciplinaire MAT-PULSE, ANR-15-IDEX-0004,LUE,Isite LUE(2015) |
| المصدر: | ISSN: 1475-7435. |
| بيانات النشر: | CCSD Inderscience |
| سنة النشر: | 2024 |
| مصطلحات موضوعية: | [PHYS.COND]Physics [physics]/Condensed Matter [cond-mat], [SPI.MAT]Engineering Sciences [physics]/Materials |
| الوصف: | International audience |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1504/IJNT.2024.141754 |
| الاتاحة: | https://hal.univ-lorraine.fr/hal-04722210 https://doi.org/10.1504/IJNT.2024.141754 |
| Rights: | http://creativecommons.org/licenses/by/ |
| رقم الانضمام: | edsbas.76D8ADD0 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1504/IJNT.2024.141754 |
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