التفاصيل البيبلوغرافية
| العنوان: |
Design and Simulation Analysis of a 3TnC MLC FeRAM Using a Nondestructive Readout and Offset-Canceled Sense Amplifier for High-Density Storage Applications |
| المؤلفون: |
Bo Peng, Donglin Zhang, Zhongqiang Wang, Jianguo Yang |
| المصدر: |
Micromachines; Volume 14; Issue 8; Pages: 1572 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2023 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
FeRAM, nondestructive readout, offset-canceled sense amplifier |
| الوصف: |
Hf0.5Zr0.5O2-based multi-level cell (MLC) ferroelectric random-access memory (FeRAM) has great potential for high-density storage applications. However, it is usually limited by the issues of a small operation margin and a large input offset. The study of circuit design and optimization for MLC FeRAM is necessary to solve these problems. In this work, we propose and simulate a configuration for a Hf0.5Zr0.5O2-based 3TnC MLC FeRAM macro circuit, which also presents a high area efficiency of 12F2 for each bit. Eight polarization states can be distinguished in a single fabricated Hf0.5Zr0.5O2-based memory device for potential MLC application, which is also simulated by a SPICE model for the subsequent circuit design. Therein, a nondestructive readout approach is adopted to expand the reading margin to 450 mV between adjacent storage levels, while a capacitorless offset-canceled sense amplifier (SA) is designed to reduce the offset voltage to 20 mV, which improves the readout reliability of multi-level states. Finally, a 4 Mb MLC FeRAM macro is simulated and verified using a GSMC 130 nm CMOS process. This study provides the foundation of circuit design for the practical fabrication of a Hf0.5Zr0.5O2-based MLC FeRAM chip in the future, which also suggests its potential for high-density storage applications. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
E：Engineering and Technology; https://dx.doi.org/10.3390/mi14081572 |
| DOI: |
10.3390/mi14081572 |
| الاتاحة: |
https://doi.org/10.3390/mi14081572 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.6E905B25 |
| قاعدة البيانات: |
BASE |