Academic Journal
Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing
| العنوان: | Lithographically engineered shallow nitrogen-vacancy centers in diamond for external nuclear spin sensing |
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| المؤلفون: | Ryosuke Fukuda, Priyadharshini Balasubramanian, Itaru Higashimata, Godai Koike, Takuma Okada, Risa Kagami, Tokuyuki Teraji, Shinobu Onoda, Moriyoshi Haruyama, Keisuke Yamada, Masafumi Inaba, Hayate Yamano, Felix M Stürner, Simon Schmitt, Liam P McGuinness, Fedor Jelezko, Takeshi Ohshima, Takahiro Shinada, Hiroshi Kawarada, Wataru Kada, Osamu Hanaizumi, Takashi Tanii, Junichi Isoya |
| المصدر: | New Journal of Physics, Vol 20, Iss 8, p 083029 (2018) |
| بيانات النشر: | IOP Publishing |
| سنة النشر: | 2018 |
| المجموعة: | Directory of Open Access Journals: DOAJ Articles |
| مصطلحات موضوعية: | diamond, nitrogen-vacancy center, regular array, quantum sensing, NMR, noise analysis, Science, Physics, QC1-999 |
| الوصف: | The simultaneous control of the number and position of negatively charged nitrogen-vacancy (NV) centers in diamond was achieved. While single near-surface NV centers are known to exhibit outstanding capabilities in external spin sensing, trade-off relationships among the accuracy of the number and position, and the coherence of NV centers have made the use of such engineered NV centers difficult. Namely, low-energy nitrogen implantation with lithographic techniques enables the nanoscale position control but results in degradation of the creation yield and the coherence property. In this paper, we show that low-energy nitrogen ion implantation to a ^12 C (99.95%)-enriched homoepitaxial diamond layer using nanomask is applicable to create shallow NV centers with a sufficiently long coherence time for external spin sensing, at a high creation yield. Furthermore, the NV centers were arranged in a regular array so that 40% lattice sites contain single NV centers. The XY8- k measurements using the individual NV centers reveal that the created NV centers have depths from 2 to 12 nm, which is comparable to the stopping range of nitrogen ions implanted at 2.5 keV. We show that the position-controlled NV centers are capable of external spin sensing with a ultra-high spatial resolution. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 1367-2630 |
| Relation: | https://doi.org/10.1088/1367-2630/aad997; https://doaj.org/toc/1367-2630; https://doaj.org/article/45183677fe7c4061ab7381b67e15b5ed |
| DOI: | 10.1088/1367-2630/aad997 |
| الاتاحة: | https://doi.org/10.1088/1367-2630/aad997 https://doaj.org/article/45183677fe7c4061ab7381b67e15b5ed |
| رقم الانضمام: | edsbas.6D4282BC |
| قاعدة البيانات: | BASE |
Full Text Finder | تدمد: | 13672630 |
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| DOI: | 10.1088/1367-2630/aad997 |