Academic Journal
Improved interface characteristics of Mo/4H-SiC schottky contact
| العنوان: | Improved interface characteristics of Mo/4H-SiC schottky contact |
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| المؤلفون: | Chen, Ke-han, Cao, Fei, Yang, Zhao-yang, Li, Xing-ji, Yang, Jian-qun, Shi, Ding-kun, Wang, Ying |
| المصدر: | Solid-State Electronics ; volume 185, page 108152 ; ISSN 0038-1101 |
| بيانات النشر: | Elsevier BV |
| سنة النشر: | 2021 |
| المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1016/j.sse.2021.108152 |
| الاتاحة: | http://dx.doi.org/10.1016/j.sse.2021.108152 https://api.elsevier.com/content/article/PII:S0038110121001957?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S0038110121001957?httpAccept=text/plain |
| Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ ; https://doi.org/10.15223/policy-017 ; https://doi.org/10.15223/policy-037 ; https://doi.org/10.15223/policy-012 ; https://doi.org/10.15223/policy-029 ; https://doi.org/10.15223/policy-004 |
| رقم الانضمام: | edsbas.6BDF02D7 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.sse.2021.108152 |
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