Academic Journal
Layer-Controlled Growth of Single-Crystalline 2D Bi 2 O 2 Se Film Driven by Interfacial Reconstruction
| العنوان: | Layer-Controlled Growth of Single-Crystalline 2D Bi 2 O 2 Se Film Driven by Interfacial Reconstruction |
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| المؤلفون: | Minsoo Kang, Han Beom Jeong, Yoonsu Shim, Hyun-Jun Chai, Yong-Sung Kim, Minhyuk Choi, Ayoung Ham, Cheolmin Park, Min-kyung Jo, Tae Soo Kim, Hyeonbin Park, Jaehyun Lee, Gichang Noh, Joon Young Kwak, Taeyong Eom, Chan-Woo Lee, Sung-Yool Choi, Jong Min Yuk, Seungwoo Song, Hu Young Jeong, Kibum Kang |
| سنة النشر: | 2023 |
| مصطلحات موضوعية: | Biophysics, Biochemistry, Medicine, Microbiology, Physiology, Ecology, Space Science, Chemical Sciences not elsewhere classified, Physical Sciences not elsewhere classified, still challenging due, spectral responsivity measurements, small effective mass, semiconductor scaling continues, precise thickness control, intriguing physical phenomena, excellent electrical properties, density functional theory, terminal devices confirmed, 3 , 2 , confined 2d systems, precise layer control, se film driven, crystalline 2d bi, 1 –, se film, analysis confirmed, reach sub, 2d materials, 2d bi |
| الوصف: | As semiconductor scaling continues to reach sub-nanometer levels, two-dimensional (2D) semiconductors are emerging as a promising candidate for the post-silicon material. Among these alternatives, Bi 2 O 2 Se has risen as an exceptionally promising 2D semiconductor thanks to its excellent electrical properties, attributed to its appropriate bandgap and small effective mass. However, unlike other 2D materials, growth of large-scale Bi 2 O 2 Se films with precise layer control is still challenging due to its large surface energy caused by relatively strong interlayer electrostatic interactions. Here, we present the successful growth of a wafer-scale (∼3 cm) Bi 2 O 2 Se film with precise thickness control down to the monolayer level on TiO 2 -terminated SrTiO 3 using metal–organic chemical vapor deposition (MOCVD). Scanning transmission electron microscopy (STEM) analysis confirmed the formation of a [BiTiO 4 ] 1– interfacial structure, and density functional theory (DFT) calculations revealed that the formation of [BiTiO 4 ] 1– significantly reduced the interfacial energy between Bi 2 O 2 Se and SrTiO 3 , thereby promoting 2D growth. Additionally, spectral responsivity measurements of two-terminal devices confirmed a bandgap increase of up to 1.9 eV in monolayer Bi 2 O 2 Se, which is consistent with our DFT calculations. Finally, we demonstrated high-performance Bi 2 O 2 Se field-effect transistor (FET) arrays, exhibiting an excellent average electron mobility of 56.29 cm 2 /(V·s). This process is anticipated to enable wafer-scale applications of 2D Bi 2 O 2 Se and facilitate exploration of intriguing physical phenomena in confined 2D systems. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| Relation: | https://figshare.com/articles/journal_contribution/Layer-Controlled_Growth_of_Single-Crystalline_2D_Bi_sub_2_sub_O_sub_2_sub_Se_Film_Driven_by_Interfacial_Reconstruction/24913610 |
| DOI: | 10.1021/acsnano.3c09369.s001 |
| الاتاحة: | https://doi.org/10.1021/acsnano.3c09369.s001 https://figshare.com/articles/journal_contribution/Layer-Controlled_Growth_of_Single-Crystalline_2D_Bi_sub_2_sub_O_sub_2_sub_Se_Film_Driven_by_Interfacial_Reconstruction/24913610 |
| Rights: | CC BY-NC 4.0 |
| رقم الانضمام: | edsbas.69C61F91 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1021/acsnano.3c09369.s001 |
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