Conference
On the determination of Poisson’s ratio of stressed monolayer and bilayer submicron thick films
العنوان: | On the determination of Poisson’s ratio of stressed monolayer and bilayer submicron thick films |
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المؤلفون: | Martins, P., Malhaire, C., Brida, S., Barbier, Damien |
المساهمون: | INL - Dispositifs Electroniques (INL - DE), Institut des Nanotechnologies de Lyon (INL), École Centrale de Lyon (ECL), Université de Lyon-Université de Lyon-Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-École Supérieure de Chimie Physique Électronique de Lyon (CPE)-Institut National des Sciences Appliquées de Lyon (INSA Lyon), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS)-École Centrale de Lyon (ECL), Université de Lyon-Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Centre National de la Recherche Scientifique (CNRS), Auxitrol SA, Esterline Corporation, uxitrol SA, Esterline Corporation |
المصدر: | Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS ; DTIP 2008 ; https://hal.science/hal-00277708 ; DTIP 2008, Apr 2008, Nice, France. pp.197-200 |
بيانات النشر: | HAL CCSD EDA PUBLISHING Association |
سنة النشر: | 2008 |
المجموعة: | Université de Lyon: HAL |
مصطلحات موضوعية: | [INFO.INFO-OH]Computer Science [cs]/Other [cs.OH] |
جغرافية الموضوع: | Nice, France |
Time: | Nice, France |
الوصف: | Submitted on behalf of EDA Publishing Association (http://irevues.inist.fr/handle/2042/16838) ; International audience ; In this paper, the bulge test is used to determine the mechanical properties of very thin dielectric membranes. Commonly, this experimental method permits to determine the residual stress (s0) and biaxial Young’s modulus (E/(1-u)). Associating square and rectangular membranes with different length to width ratios, the Poisson’s ratio (u) can also be determined. LPCVD Si3N4 monolayer and Si3N4/SiO2 bilayer membranes, with thicknesses down to 100 nm, have been characterized giving results in agreement with literature for Si3N4, E = 212 ± 14 GPa, s0 = 420 ± 8 and u = 0.29. |
نوع الوثيقة: | conference object |
اللغة: | English |
Relation: | info:eu-repo/semantics/altIdentifier/arxiv/0805.0899; hal-00277708; https://hal.science/hal-00277708; https://hal.science/hal-00277708/document; https://hal.science/hal-00277708/file/dtip08197.pdf; ARXIV: 0805.0899 |
الاتاحة: | https://hal.science/hal-00277708 https://hal.science/hal-00277708/document https://hal.science/hal-00277708/file/dtip08197.pdf |
Rights: | info:eu-repo/semantics/OpenAccess |
رقم الانضمام: | edsbas.6804447 |
قاعدة البيانات: | BASE |
الوصف غير متاح. |