التفاصيل البيبلوغرافية
| العنوان: |
Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system |
| المؤلفون: |
Jiang CY, Chen YH, Ma H, Yu JL, Liu Y |
| سنة النشر: |
2011 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Optical-properties, Dots, 半导体材料, optical properties, optical constants, optische eigen schaften, proprietes optiques, optical props |
| الوصف: |
In this letter we investigated the InAs/InAlAs quantum wires (QWRs) superlattice by optically exciting the structure with near-infrared radiation. By varying the helicity of the radiation at room temperature we observed the circular photogalvanic effect related to the C-2v symmetry of the structure, which could be attributed to the formation of a quasi-two-dimensional system underlying in the vicinity of the QWRs pattern. The ratio of Rashba and Dresselhaus terms shows an evolution of the spin-orbit interaction in quasi-two-dimensional structure with the QWR layer deposition thickness. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
APPLIED PHYSICS LETTERS; Jiang CY; Chen YH; Ma H; Yu JL; Liu Y.Circular photogalvanic effect induced by near-infrared radiation in InAs quantum wires patterned quasi-two-dimensional electron system.APPLIED PHYSICS LETTERS,2011,98(23):Art. No. 232116; http://ir.semi.ac.cn/handle/172111/21395 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/21395 |
| رقم الانضمام: |
edsbas.6712C492 |
| قاعدة البيانات: |
BASE |