Academic Journal
Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices
| العنوان: | Characterization of GaN MOS Structures Using Photoanodically Grown Oxides with Respect to FET Devices |
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| المؤلفون: | Mistele, D., Rotter, T., Ferretti, R., Fedler, F., Klausing, H., Semchinova, O.K., Stemmer, J., Aderhold, J., Graul, J. |
| المصدر: | MRS Proceedings ; volume 639 ; ISSN 0272-9172 1946-4274 |
| بيانات النشر: | Springer Science and Business Media LLC |
| سنة النشر: | 2000 |
| الوصف: | Photoanodically grown Ga 2 O 3 layers were characterized with respect to their suitability as gate dielectrics for GaN based MOSFET Device applications. The Ga 2 O 3 layers were produced in a photoelectrochemical cell using aqueous solutions of KOH. IV characterization of MOS structures show insulating behavior of the oxide layers and CV measurements indicate a small density of states at the oxide/GaN interface. Integrating the wet chemical oxide growth in a MOSFET device fabricating process includes tungsten as gate metal together with H 2 O 2 as etching solution for the gate metal. Source/drain areas were made free of oxide by the alkaline developer of a conventional lithographic step and metallization was done by using the liftoff technique. MOS structures show no inversion mode but strong depletion in reverse biasing mode. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1557/proc-639-g11.42 |
| الاتاحة: | http://dx.doi.org/10.1557/proc-639-g11.42 https://www.cambridge.org/core/services/aop-cambridge-core/content/view/S1946427400606401 |
| Rights: | https://www.cambridge.org/core/terms |
| رقم الانضمام: | edsbas.66E39064 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1557/proc-639-g11.42 |
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