Academic Journal
Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature
| العنوان: | Subthreshold Swing in Silicon Gate-All-Around Nanowire and Fully Depleted SOI MOSFETs at Cryogenic Temperature |
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| المؤلفون: | Sekiguchi, Shohei, Ahn, Min-Ju, Mizutani, Tomoko, Saraya, Takuya, Kobayashi, Masaharu, Hiramoto, Toshiro |
| المساهمون: | Japan Society for the Promotion of Science (JSPS) KAKENHI |
| المصدر: | IEEE Journal of the Electron Devices Society ; volume 9, page 1151-1154 ; ISSN 2168-6734 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
| سنة النشر: | 2021 |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| DOI: | 10.1109/jeds.2021.3108854 |
| الاتاحة: | http://dx.doi.org/10.1109/jeds.2021.3108854 http://xplorestaging.ieee.org/ielx7/6245494/9359727/09525143.pdf?arnumber=9525143 |
| Rights: | https://creativecommons.org/licenses/by/4.0/legalcode ; https://creativecommons.org/licenses/by/4.0/legalcode |
| رقم الانضمام: | edsbas.6625622A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1109/jeds.2021.3108854 |
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