التفاصيل البيبلوغرافية
| العنوان: |
Nickel doped indium tin oxide anode and effect on dark spot development of organic light-emitting devices |
| المؤلفون: |
許進明, C.M. Hsu, C.S. Kuo, W.C. Hsu, W.T. Wu |
| المساهمون: |
光電工程系所 |
| بيانات النشر: |
Elsevier |
| سنة النشر: |
2009 |
| المجموعة: |
Southern Taiwan University Institutional Repository (STUTIR) |
| مصطلحات موضوعية: |
Nickel, ITO, OLED, Dark spot |
| Time: |
14 |
| الوصف: |
This article demonstrated that introducing nickel (Ni) atoms into an indium tin oxide (ITO) anode could considerably decrease ITO surface roughness and eliminate the formation of dark spots of an organic light-emitting device (OLED). A dramatic drop in surface roughness from 6.52 nm of an conventional ITO to 0.46 nm of an 50 nm Ni(50 W)-doped ITO anode was observed, and this led to an improved lifetime performance of an Alq3 based OLED device attributed to reduced dark spots. Reducing thickness of Ni-doped ITO anode was found to worsen surface roughness. Meanwhile, the existence of Ni atoms showed little effect on deteriorating the light-emitting mechanism of OLED devices. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
English |
| Relation: |
Applied Surface Science, 255 p.p.3759-3763 (SCI); http://ir.lib.stust.edu.tw/handle/987654321/5774 |
| الاتاحة: |
http://ir.lib.stust.edu.tw/handle/987654321/5774 |
| رقم الانضمام: |
edsbas.661C6774 |
| قاعدة البيانات: |
BASE |