التفاصيل البيبلوغرافية
| العنوان: |
Ambipolar Light-Emitting Transistors on Chemical Vapor Deposited Monolayer MoS 2 |
| المؤلفون: |
Ponomarev, Evgeniy, Gutierrez Lezama, Ignacio, Ubrig, Nicolas, Morpurgo, Alberto |
| المصدر: |
ISSN: 1530-6984 ; Nano letters, vol. 15, no. 12 (2015) p. 8289-8294. |
| سنة النشر: |
2015 |
| المجموعة: |
Université de Genève: Archive ouverte UNIGE |
| مصطلحات موضوعية: |
info:eu-repo/classification/ddc/500.2, MoS2, Light-emitting transistor, Ionic liquid gating, Ambipolar transport, CVD |
| الوصف: |
We realize and investigate ionic liquid gated field-effect transistors (FETs) on large-area MoS2 monolayers grown by chemical vapor deposition (CVD). Under electron accumulation, the performance of these devices is comparable to that of FETs based on exfoliated flakes. FETs on CVD-grown material, however, exhibit clear ambipolar transport, which for MoS2 monolayers had not been reported previously. We exploit this property to estimate the bandgap Δ of monolayer MoS2 directly from the device transfer curves and find Δ ≈ 2.4–2.7 eV. In the ambipolar injection regime, we observe electroluminescence due to exciton recombination in MoS2, originating from the region close to the hole-injecting contact. Both the observed transport properties and the behavior of the electroluminescence can be consistently understood as due to the presence of defect states at an energy of 250–300 meV above the top of the valence band, acting as deep traps for holes. Our results are of technological relevance, as they show that devices with useful optoelectronic functionality can be realized on large-area MoS2 monolayers produced by controllable and scalable techniques. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| Relation: |
https://archive-ouverte.unige.ch/unige:80547; unige:80547 |
| الاتاحة: |
https://archive-ouverte.unige.ch/unige:80547 |
| Rights: |
info:eu-repo/semantics/openAccess |
| رقم الانضمام: |
edsbas.645E93DA |
| قاعدة البيانات: |
BASE |