Academic Journal
A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures
| العنوان: | A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures |
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| المؤلفون: | Purches, W. E., Rossi, A., Zhao, R., Kafanov, Sergey, Duty, T. L., Dzurak, A. S., Rogge, S., Tettamanzi, G. C. |
| سنة النشر: | 2015 |
| المجموعة: | Lancaster University: Lancaster Eprints |
| الوصف: | Schottky Barrier-MOSFET technology offers intriguing possibilities for cryogenic nano-scale devices, such as Si quantum devices and superconducting devices. We present experimental results on a device architecture where the gate electrode is self-aligned with the device channel and overlaps the source and drain electrodes. This facilitates a sub-5 nm gap between the source/drain and channel, and no spacers are required. At cryogenic temperatures, such devices function as p-MOS Tunnel FETs, as determined by the Schottky barrier at the Al-Si interface, and as a further advantage, fabrication processes are compatible with both CMOS and superconducting logic technology. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| Relation: | Purches, W. E. and Rossi, A. and Zhao, R. and Kafanov, Sergey and Duty, T. L. and Dzurak, A. S. and Rogge, S. and Tettamanzi, G. C. (2015) A planar Al-Si Schottky barrier metal-oxide-semiconductor field effect transistor operated at cryogenic temperatures. Applied Physics Letters, 107 (6). ISSN 0003-6951 |
| DOI: | 10.1063/1.4928589 |
| الاتاحة: | https://eprints.lancs.ac.uk/id/eprint/84912/ https://doi.org/10.1063/1.4928589 |
| رقم الانضمام: | edsbas.62F5F504 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.4928589 |
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