التفاصيل البيبلوغرافية
| العنوان: |
Microstructure and photoluminescence of a-SiOx : H |
| المؤلفون: |
Ma ZX, Liao XB, Cheng WC, He J, Yue GZ, Wang YQ, Kong GL, Ma ZX,Chinese Acad Sci,Ctr Condensed Matter Phys,Inst Semicond,State Lab Surface Phys,Beijing 100083,Peoples R China. |
| سنة النشر: |
1998 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Quantum Confinement Effects, Photoluminescence, Silicon, Infrared And Raman Spectra, Matrix, Visible-light Emission, System, Films, Oxide, 半导体物理, qce, photography--films, finite volume method, oxides, 光致发光, silicium, si, silizium, sudden impulse, systeme international, state interaction method, stieltje imaging, spherical interaction approximation, 矩阵, ground mass, groundmass, 系统, photographic film, motion pictures, movies |
| الوصف: |
Two strong photoluminescence (PL) bands in the spectral range of 550-900 nm have been observed at room temperature from a series of a-SiOx:H films fabricated by plasma-enhanced chemical vapor deposition (PECVD) technique. One is composed of a main band in the red-light region and a shoulder; the other is located at about 850 nm, only found after 1170 degrees C annealing in N-2 atmosphere. In conjunction with infrared (IR) and micro-Raman spectra, it is thought that the two PL bands are associated with a-Si clusters in the SiOx network and nanocrystalline silicon in SiO2, respectively. |
| نوع الوثيقة: |
report |
| اللغة: |
English |
| Relation: |
SCIENCE IN CHINA SERIES A-MATHEMATICS; Ma ZX; Liao XB; Cheng WC; He J; Yue GZ; Wang YQ; Kong GL .Microstructure and photoluminescence of a-SiOx : H ,SCIENCE IN CHINA SERIES A-MATHEMATICS,1998,41(9):1002-1008; http://ir.semi.ac.cn/handle/172111/13074 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/13074 |
| رقم الانضمام: |
edsbas.6179D588 |
| قاعدة البيانات: |
BASE |