Academic Journal
Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates
| العنوان: | Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates |
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| المؤلفون: | Ahiboz, Doguscan, Nasser, Hisham, Aygun, Ezgi, Bek, Alpan, Turan, Raşit |
| بيانات النشر: | IOP Publishing SEMICONDUCTOR SCIENCE AND TECHNOLOGY |
| سنة النشر: | 2018 |
| مصطلحات موضوعية: | Electrical and Electronic Engineering, Materials Chemistry, Electronic, Optical and Magnetic Materials, Condensed Matter Physics |
| الوصف: | Integration of oxygen deficient sub-stoichiometric titanium dioxide (TiO2-x) thin films as the electron transporting-hole blocking layer in solar cell designs are expected to reduce fabrication costs by eliminating high temperature processes while maintaining high conversion efficiencies. In this paper, we conducted a study to reveal the electrical properties of TiO2-x thin films grown on crystalline silicon (c-Si) substrates by atomic layer deposition (ALD) technique. Effect of ALD substrate temperature, post deposition annealing, and doping type of the c-Si substrate on the interface states and TiO2-x bulk properties were extracted by performing admittance (C-V, G-V) and current-voltage (J-V) measurements. Moreover, the asymmetry in C-V and J-V measurements between the p-n type and n-n TiO2-x-c-Si heterojunction types were examined and the electron transport selectivity of TiO2-x was revealed. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | unknown |
| تدمد: | 0268-1242 |
| Relation: | Ahiboz D., Nasser H., Aygun E., Bek A., Turan R., "Electrical response of electron selective atomic layer deposited TiO2-x heterocontacts on crystalline silicon substrates", SEMICONDUCTOR SCIENCE AND TECHNOLOGY, cilt.33, 2018; 85044933920; https://hdl.handle.net/11511/37878; 33; WOS:000428463500001 |
| DOI: | 10.1088/1361-6641/aab535 |
| الاتاحة: | https://hdl.handle.net/11511/37878 https://doi.org/10.1088/1361-6641/aab535 |
| Rights: | Attribution-NonCommercial-NoDerivatives 4.0 International ; http://creativecommons.org/licenses/by-nc-nd/4.0/ |
| رقم الانضمام: | edsbas.60E8A863 |
| قاعدة البيانات: | BASE |
| تدمد: | 02681242 |
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| DOI: | 10.1088/1361-6641/aab535 |