Academic Journal
Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer
| العنوان: | Epitaxial growth and characterization of GaN thin films on graphene/sapphire substrate by embedding a hybrid-AlN buffer layer |
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| المؤلفون: | Ke, W.-C., Liang, Z.-Y., Tesfay, S.T., Chiang, Chiang C.-Y., Yang, C.-Y., Chang, K.-J., Lin, J.-C. |
| سنة النشر: | 2019 |
| المجموعة: | National Taiwan University of Science and Technology Repository (NTUSTR) / 台灣科技大學 |
| مصطلحات موضوعية: | AlN, GaN, Graphene, Schottky contact, Threading dislocation |
| الوصف: | This study investigates that high-quality GaN thin films can be grown on a few-layer graphene (FLG)/sapphire substrate by embedding a hybrid AlN buffer layer (BL). The hybrid AlN BL is constructed by low-temperature AlN nucleation layer (LT-AlN NL) and high-temperature AlN BL grown respectively by sputtering and metal organic chemical vapor deposition (MOCVD). The high density of edge-type threading dislocation (TD) in the GaN sample without hybrid AlN BL provide current leakage paths, resulting in a symmetric and temperature-independent I-V characteristic curve for a Ni-based Schottky contact. The excellent adhesion and uniform coverage of LT-AlN NL on the FLG layer by sputtering can overcome the nucleation issue and prevent the thermal etching effect of graphene during MOCVD epitaxial process. The edge-type TD density and carbon concentration of the GaN thin films grown on the hybrid AlN BL/FLG/sapphire substrate can be reduced significantly, resulting in a lower intensity of blue, green, and orange luminescences on a 17-K photoluminescence spectrum. The Ni-based Schottky contact with a barrier height of 0.69 eV and leakage current density of 4.38 × 10−6 A/cm2 is obtained, which demonstrates that a high-quality GaN thin films can be grown onto an FLG substrate by embedding a hybrid AlN BL. Copyright 2019 Elsevier B.V. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | 110 bytes; text/html |
| اللغة: | unknown |
| Relation: | Applied Surface Science, Volume 494, Page: 644 - 650; http://ir.lib.ntust.edu.tw/handle/987654321/79135; http://ir.lib.ntust.edu.tw/bitstream/987654321/79135/1/index.html |
| DOI: | 10.1016/j.apsusc.2019.07.211 |
| الاتاحة: | http://ir.lib.ntust.edu.tw/handle/987654321/79135 https://doi.org/10.1016/j.apsusc.2019.07.211 http://ir.lib.ntust.edu.tw/bitstream/987654321/79135/1/index.html |
| رقم الانضمام: | edsbas.60813EF |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.apsusc.2019.07.211 |
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