Academic Journal
OBTAINING A STRUCTURALLY PERFECT SEMICONDUCTOR SOLID SOLUTION SI1-X GEX WITH SPECIFIED ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES
| العنوان: | OBTAINING A STRUCTURALLY PERFECT SEMICONDUCTOR SOLID SOLUTION SI1-X GEX WITH SPECIFIED ELECTROPHYSICAL AND PHOTOELECTRIC PROPERTIES |
|---|---|
| المؤلفون: | Razzokov, A Sh, Khakimov, N Z, Davletov, I Y, Eshchanov, Kh O, Matnazarov, A R |
| المصدر: | Scientific-technical journal |
| بيانات النشر: | 2030 Uzbekistan Research Online |
| سنة النشر: | 2020 |
| المجموعة: | Uzbekistan Research Online |
| مصطلحات موضوعية: | epitaxy, crystallization, solution-melt, X-ray diffractogram, solid solution, coagulation, dislocation, substrate, nanocluster, chemical potential, structure |
| الوصف: | Single-crystal films of Si1-xGex (0 substrates from a tin solution-melt at a temperature in the range of the onset of crystallization To.c.= 800°С÷1050°С by liquid-phase epitaxy. The dependence of the formation of dislocations at the substrate-film interface on the number and size of the formation of nanoclusters in the solution-melt during the growth of the Si1-xGex solid solution has been studied. Optimal technological growth modes for obtaining crystalline perfect epitaxial layers and structures are presented. |
| نوع الوثيقة: | text |
| وصف الملف: | application/pdf |
| اللغة: | Russian |
| Relation: | https://uzjournals.edu.uz/ferpi/vol3/iss5/10; https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1424&context=ferpi |
| الاتاحة: | https://uzjournals.edu.uz/ferpi/vol3/iss5/10 https://uzjournals.edu.uz/cgi/viewcontent.cgi?article=1424&context=ferpi |
| رقم الانضمام: | edsbas.5E933AF1 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |