Academic Journal

Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature

التفاصيل البيبلوغرافية
العنوان: Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature
المؤلفون: Ohashi, N, Mora-Fonz, D, Otani, S, Ohgaki, T, Miyakawa, M, Shluger, A
المصدر: Inorganic Chemistry , 59 (24) pp. 18305-18313. (2020)
بيانات النشر: AMER CHEMICAL SOC
سنة النشر: 2020
المجموعة: University College London: UCL Discovery
الوصف: We have synthesized inverse-perovskite-type oxysilicides and oxygermanides represented by R3SiO and R3GeO (R = Ca and Sr) and studied their characteristics in the search for nontoxic narrow band gap semiconductors. These compounds exhibit a sharp absorption edge around 0.9 eV and a luminescence peak in the same energy range. These results indicate that the obtained materials have a direct-band electronic structure, which was confirmed by hybrid DFT calculations. These materials, made from earth abundant and nontoxic elements and with a relatively light electron/hole effective mass, represent strong candidates for nontoxic optoelectronic devices in the infrared range.
نوع الوثيقة: article in journal/newspaper
وصف الملف: text
اللغة: English
Relation: https://discovery.ucl.ac.uk/id/eprint/10123095/1/Ohashi_Inverse_perovskite_oxysilisides_final.pdf; https://discovery.ucl.ac.uk/id/eprint/10123095/
الاتاحة: https://discovery.ucl.ac.uk/id/eprint/10123095/1/Ohashi_Inverse_perovskite_oxysilisides_final.pdf
https://discovery.ucl.ac.uk/id/eprint/10123095/
Rights: open
رقم الانضمام: edsbas.5C5CD746
قاعدة البيانات: BASE