Academic Journal
Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature
العنوان: | Inverse Perovskite Oxysilicides and Oxygermanides as Candidates for Nontoxic Infrared Semiconductor and Their Chemical Bonding Nature |
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المؤلفون: | Ohashi, N, Mora-Fonz, D, Otani, S, Ohgaki, T, Miyakawa, M, Shluger, A |
المصدر: | Inorganic Chemistry , 59 (24) pp. 18305-18313. (2020) |
بيانات النشر: | AMER CHEMICAL SOC |
سنة النشر: | 2020 |
المجموعة: | University College London: UCL Discovery |
الوصف: | We have synthesized inverse-perovskite-type oxysilicides and oxygermanides represented by R3SiO and R3GeO (R = Ca and Sr) and studied their characteristics in the search for nontoxic narrow band gap semiconductors. These compounds exhibit a sharp absorption edge around 0.9 eV and a luminescence peak in the same energy range. These results indicate that the obtained materials have a direct-band electronic structure, which was confirmed by hybrid DFT calculations. These materials, made from earth abundant and nontoxic elements and with a relatively light electron/hole effective mass, represent strong candidates for nontoxic optoelectronic devices in the infrared range. |
نوع الوثيقة: | article in journal/newspaper |
وصف الملف: | text |
اللغة: | English |
Relation: | https://discovery.ucl.ac.uk/id/eprint/10123095/1/Ohashi_Inverse_perovskite_oxysilisides_final.pdf; https://discovery.ucl.ac.uk/id/eprint/10123095/ |
الاتاحة: | https://discovery.ucl.ac.uk/id/eprint/10123095/1/Ohashi_Inverse_perovskite_oxysilisides_final.pdf https://discovery.ucl.ac.uk/id/eprint/10123095/ |
Rights: | open |
رقم الانضمام: | edsbas.5C5CD746 |
قاعدة البيانات: | BASE |
الوصف غير متاح. |