Academic Journal
Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates
| العنوان: | Effectiveness of selective area growth using van der Waals h-BN layer for crack-free transfer of large-size III-N devices onto arbitrary substrates |
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| المؤلفون: | Karrakchou, Soufiane, Sundaram, Suresh, Ayari, Taha, Mballo, Adama, Vuong, Phuong, Srivastava, Ashutosh, Gujrati, Rajat, Ahaitouf, Ali, Patriarche, Gilles, Leichle, Thierry, Gautier, Simon, Moudakir, Tarik, Voss, Paul, L, Salvestrini, Jean-Paul, Ougazzaden, Abdallah |
| المساهمون: | Georgia Tech Lorraine Metz, Ecole Nationale Supérieure des Arts et Metiers Metz-Georgia Institute of Technology Atlanta -Ecole Supérieure d'Electricité - SUPELEC (FRANCE)-CentraleSupélec-Centre National de la Recherche Scientifique (CNRS)-Université de Franche-Comté (UFC), Université Bourgogne Franche-Comté COMUE (UBFC)-Université Bourgogne Franche-Comté COMUE (UBFC), Équipe Microsystèmes électromécaniques (LAAS-MEMS), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), ANR Labex Ganex, ANR Inmost (AAP 2019), ANR-19-CE08-0025,INMoSt,Cellules solaires multi-jonctions multi-fils à base de nano-pyramides d'InGaN(2019), ANR-11-LABX-0014,GANEX,Réseau national sur GaN(2011) |
| المصدر: | ISSN: 2045-2322. |
| بيانات النشر: | HAL CCSD Nature Publishing Group |
| سنة النشر: | 2020 |
| المجموعة: | Université Toulouse III - Paul Sabatier: HAL-UPS |
| مصطلحات موضوعية: | Electronic devices, Two-dimensional materials, [SPI]Engineering Sciences [physics] |
| الوصف: | International audience ; Selective Area van der Waals Epitaxy (SAVWE) of III-Nitride device has been proposed recently by ourgroup as an enabling solution for h-BN-based device transfer. By using a patterned dielectric maskwith openings slightly larger than device sizes, pick-and-place of discrete LEDs onto fexible substrateswas achieved. A more detailed study is needed to understand the efect of this selective area growthon material quality, device performance and device transfer. Here we present a study performed ontwo types of LEDs (those grown on h-BN on patterned and unpatterned sapphire) from the epitaxialgrowth to device performance and thermal dissipation measurements before and after transfer.Millimeter-size LEDs were transferred to aluminum tape and to silicon substrates by van der Waalsliquid capillary bonding. It is shown that patterned samples lead to a better material quality as wellas improved electrical and optical device performances. In addition, patterned structures allowed fora much better transfer yield to silicon substrates than unpatterned structures. We demonstrate thatSAVWE, combined with either transfer processes to soft or rigid substrates, ofers an efcient, robustand low-cost heterogenous integration capability of large-size devices to silicon for photonic andelectronic applications. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| Relation: | hal-03120983; https://hal.science/hal-03120983; https://hal.science/hal-03120983/document; https://hal.science/hal-03120983/file/Effectiveness%20of%20selective%20area%20growth%20using%20van%20der%20Waals%20h-BN%20layer%20for%20crack-free%20transfer%20of%20large-size%20III-N%20devices%20onto%20arbitrary%20substrates.pdf |
| DOI: | 10.1038/s41598-020-77681-z |
| الاتاحة: | https://hal.science/hal-03120983 https://hal.science/hal-03120983/document https://hal.science/hal-03120983/file/Effectiveness%20of%20selective%20area%20growth%20using%20van%20der%20Waals%20h-BN%20layer%20for%20crack-free%20transfer%20of%20large-size%20III-N%20devices%20onto%20arbitrary%20substrates.pdf https://doi.org/10.1038/s41598-020-77681-z |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.5A5B93A0 |
| قاعدة البيانات: | BASE |
| DOI: | 10.1038/s41598-020-77681-z |
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