Academic Journal

Development of ZnO:Al‐based transparent contacts deposited at low‐temperature by RF‐sputtering on InN layers

التفاصيل البيبلوغرافية
العنوان: Development of ZnO:Al‐based transparent contacts deposited at low‐temperature by RF‐sputtering on InN layers
المؤلفون: Fernández, S., Naranjo, F. B., de Abril, O., Valdueza‐Felip, S.
المصدر: physica status solidi c ; volume 9, issue 3-4, page 1065-1069 ; ISSN 1862-6351 1610-1642
بيانات النشر: Wiley
سنة النشر: 2012
المجموعة: Wiley Online Library (Open Access Articles via Crossref)
الوصف: Nitride semiconductors (Al,Ga,In)N attain material properties that make them suitable for photovoltaic and optoelectronics devices to be used in hard environments. These properties include an energy gap continuously tuneable within the energy range of the solar spectrum, a high radiation resistance and thermal stability. The developing of efficient devices requires contacts with low resistivity and high transmittance in visible region. ZnO:Al (AZO) emerges as a feasible candidate for transparent contact to nitride semiconductors, taking advantage of its low resistivity, high transparency in visible wavelengths and a very low lattice mismatch with respect to nitride semiconductors. This work presents a study of the applications of AZO films deposited at low‐temperature by RF magnetron sputtering as transparent contact for InN layers. The optimization of AZO conditions deposition lead to the obtaining of contacts which shows an ohmic behaviour for the as‐deposited layer, regardless the thickness of the ZnO:Al contact layer. Specific contact resistances of 1.6 Ω·cm 2 were achieved for the contact with 90 nm thick ZnO:Al layer without any post‐deposition treatment (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1002/pssc.201100146
الاتاحة: http://dx.doi.org/10.1002/pssc.201100146
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssc.201100146
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssc.201100146
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رقم الانضمام: edsbas.590CF17E
قاعدة البيانات: BASE