Conference
Over 40W, X-Band GaN on SiC MMIC amplifier
| العنوان: | Over 40W, X-Band GaN on SiC MMIC amplifier |
|---|---|
| المؤلفون: | Mjema, Charles Alphonce, Haentjens, Benoît, Fourn, Erwan, Drissi, M'Hamed, Diego Arroyo, Laura, Herrera Guardado, Amparo |
| المساهمون: | Universidad de Cantabria |
| المصدر: | Proceedings of the 15th European Microwave Integrated Circuits Conference (EuMIC), Utrecht, The Netherlands, 2020, 265-268 |
| بيانات النشر: | Institute of Electrical and Electronics Engineers, Inc. |
| سنة النشر: | 2021 |
| المجموعة: | Universidad de Cantabria: UCrea |
| مصطلحات موضوعية: | MMIC, Gallium Nitride (GaN), High Power Amplifiers (HPA), X-band, Radar |
| الوصف: | In this paper we present the study and obtained results of a MMIC High Power Amplifier operating in X-band. The device is designed using 250nm GaN HEMT on SiC process. The targeted specifications include pulsed operation from 8 to 10.5GHz. In pulsed mode and 28V of drain voltage, an output power more than 40W with (37-40)% PAE has been achieved throughout the bandwidth, while remarkable 52.4W output power with associated 37% PAE has been recorded at 8.75GHz for a 32V of drain voltage. The HPA stability has been studied by considering the influence of external decoupling components and dedicated testing environment. |
| نوع الوثيقة: | conference object |
| اللغة: | English |
| ردمك: | 978-2-87487-060-6 2-87487-060-9 |
| Relation: | https://ieeexplore.ieee.org/document/9337319; http://hdl.handle.net/10902/20775 |
| الاتاحة: | http://hdl.handle.net/10902/20775 |
| Rights: | © 2020 EuMA (European Microwave Association) ; openAccess |
| رقم الانضمام: | edsbas.5698F3CC |
| قاعدة البيانات: | BASE |
| ردمك: | 9782874870606 2874870609 |
|---|