Academic Journal
High-performance ZnO Nanowire Field Effect Transistors
| العنوان: | High-performance ZnO Nanowire Field Effect Transistors |
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| المؤلفون: | Chang, Pai-Chun, Fan, Zhiyong, Chien, Chung-Jen, Stichtenoth, Daniel, Ronning, Carsten, Lu, Jia Grace |
| سنة النشر: | 2006 |
| المجموعة: | The Hong Kong University of Science and Technology: HKUST Institutional Repository |
| الوصف: | ZnO nanowires with high crystalline and optical properties are characterized, showing strong effect of the surface defect states. In order to optimize the performance of devices based on these nanowires, a series of complementary metal-oxide semiconductor compatible surface passivation procedures is employed. Electrical transport measurements demonstrate significantly reduced subthreshold swing, high on/off ratio, and unprecedented field effect mobility. © 2006 American Institute of Physics. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0003-6951 |
| Relation: | http://repository.ust.hk/ir/Record/1783.1-34159; Applied Physics Letters, v. 89, (13), September 2006, article number 133113; https://doi.org/10.1063/1.2357013; http://www.scopus.com/record/display.url?eid=2-s2.0-33749258715&origin=inward; http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000240875800113 |
| DOI: | 10.1063/1.2357013 |
| الاتاحة: | http://repository.ust.hk/ir/Record/1783.1-34159 https://doi.org/10.1063/1.2357013 http://www.scopus.com/record/display.url?eid=2-s2.0-33749258715&origin=inward http://gateway.isiknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=LinksAMR&SrcApp=PARTNER_APP&DestLinkType=FullRecord&DestApp=WOS&KeyUT=000240875800113 |
| رقم الانضمام: | edsbas.552DC21E |
| قاعدة البيانات: | BASE |
| تدمد: | 00036951 |
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| DOI: | 10.1063/1.2357013 |