Academic Journal
A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control
| العنوان: | A top-gate GaN nanowire metal–semiconductor field effect transistor with improved channel electrostatic control |
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| المؤلفون: | Gačević, Ž., López-Romero, D., Juan Mangas, T., Calleja, E. |
| المصدر: | Applied Physics Letters ; volume 108, issue 3 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 2016 |
| الوصف: | A uniformly n-type doped GaN:Si nanowire (NW), with a diameter of d = 90 nm and a length of 1.2 μm, is processed into a metal-semiconductor field effect transistor (MESFET) with a semi-cylindrical top Ti/Au Schottky gate. The FET is in a normally-ON mode, with the threshold at −0.7 V and transconductance of gm ∼ 2 μS (the transconductance normalized with NW diameter gm/d > 22 mS/mm). It enters the saturation mode at VDS ∼ 4.5 V, with the maximum measured drain current IDS = 5.0 μA and the current density exceeding JDS > 78 kA/cm2. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/1.4940197 |
| DOI: | 10.1063/1.4940197/14475889/033101_1_online.pdf |
| الاتاحة: | http://dx.doi.org/10.1063/1.4940197 https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.4940197/14475889/033101_1_online.pdf |
| رقم الانضمام: | edsbas.53067ABA |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.4940197 |
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