Academic Journal
Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization
| العنوان: | Photoluminescence study of ZnSe single crystals grown by solid-phase recrystallization |
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| المؤلفون: | Tournié, E., Morhain, C., Neu, G., Faurie, J.-P., Triboulet, R., Ndap, J. O. |
| المصدر: | Applied Physics Letters ; volume 68, issue 10, page 1356-1358 ; ISSN 0003-6951 1077-3118 |
| بيانات النشر: | AIP Publishing |
| سنة النشر: | 1996 |
| الوصف: | We investigate through low-temperature photoluminescence (PL) and selective photoluminescence (SPL) spectroscopies, ZnSe single crystals grown by solid-phase recrystallization. The PL spectra are dominated by the so-called I1deep excitonic line, a neutral–acceptor bound–exciton line I1, the free-exciton emission FX, and the n=2 excited state of FX. We identify the main residual impurities. Donor–acceptor pair bands are hardly detected. A major characteristic of these samples is the quasiabsence of any Cu-related deep emission which generally plagues the PL spectra of bulk ZnSe. Consequently, I1deep is ascribed to an exciton bound to Zn-vacancies related acceptors. Our results indicate that these ZnSe samples are of high quality and that solid-phase recrystallization is a promising technique to prepare ZnSe epitaxial substrates. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| DOI: | 10.1063/1.116078 |
| الاتاحة: | http://dx.doi.org/10.1063/1.116078 https://pubs.aip.org/aip/apl/article-pdf/68/10/1356/18517565/1356_1_online.pdf |
| رقم الانضمام: | edsbas.516A7F0A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1063/1.116078 |
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