Academic Journal
Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides
العنوان: | Low frequency noise in biaxially strained silicon n-MOSFETs with ultrathin gate oxides |
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المؤلفون: | Contaret, Thierry, Boutchacha, Touati, Ghibaudo, Gérard, Bœuf, Frédéric, Skotnicki, Thomas |
المصدر: | Solid-State Electronics ; volume 51, issue 4, page 633-637 ; ISSN 0038-1101 |
بيانات النشر: | Elsevier BV |
سنة النشر: | 2007 |
المجموعة: | ScienceDirect (Elsevier - Open Access Articles via Crossref) |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | English |
DOI: | 10.1016/j.sse.2007.02.007 |
الاتاحة: | https://doi.org/10.1016/j.sse.2007.02.007 https://api.elsevier.com/content/article/PII:S0038110107000718?httpAccept=text/xml https://api.elsevier.com/content/article/PII:S0038110107000718?httpAccept=text/plain |
Rights: | https://www.elsevier.com/tdm/userlicense/1.0/ |
رقم الانضمام: | edsbas.4B77C1AD |
قاعدة البيانات: | BASE |
DOI: | 10.1016/j.sse.2007.02.007 |
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