Academic Journal

Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?

التفاصيل البيبلوغرافية
العنوان: Does interfacial exciton quenching exist in high-performance quantum dot light-emitting diodes?
المؤلفون: Qu, Xiangwei, Liu, Wenbo, Li, Depeng, Ma, Jingrui, Gu, Mi, Jia, Siqi, Xiang, Guohong, Sun, Xiao Wei
المساهمون: Special Project for Research and Development in Key areas of Guangdong Province, Shenzhen Key Laboratory for Advanced Quantum Dot Displays and Lighting, National Key Research and Development Program of China
المصدر: Nanoscale ; volume 15, issue 7, page 3430-3437 ; ISSN 2040-3364 2040-3372
بيانات النشر: Royal Society of Chemistry (RSC)
سنة النشر: 2023
الوصف: Exciton quenching at the QD–ETL interface is unintentionally avoided, which bridges interfacial exciton quenching and high performance in a quantum dot light-emitting diode.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1039/d2nr07119c
الاتاحة: http://dx.doi.org/10.1039/d2nr07119c
http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR07119C
Rights: http://rsc.li/journals-terms-of-use
رقم الانضمام: edsbas.4B4FAAC0
قاعدة البيانات: BASE