التفاصيل البيبلوغرافية
| العنوان: |
Critical thickness for InAs quantum dot formation on (3 1 1)B InP substrates |
| المؤلفون: |
Caroff, Philippe, Bertru, N, Lu, W, Elias, G, Dehaese, O, Letoublon, A, Le Corre, A |
| المصدر: |
Journal of Crystal Growth |
| بيانات النشر: |
Elsevier |
| المجموعة: |
Australian National University: ANU Digital Collections |
| مصطلحات موضوعية: |
Keywords: A1. Reflection high-energy electron diffraction, A3. Molecular beam epitaxy, A3. Quantum dots, Capping layers, Critical thickness, Double-cap procedures, InAs, InAs quantum dots, Inp, InP substrates, Mass transports, Substrate temperatures, Crystal growth A1. Reflection high-energy electron diffraction |
| الوصف: |
We report on the critical thickness for InAs quantum dot (QD) formation on (3 1 1)B InP substrates. Firstly, critical thicknesses for InAs QD formation on InP surfaces have been measured by reflection high-energy electron diffraction. Large change of the |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
unknown |
| تدمد: |
0022-0248 |
| Relation: |
http://hdl.handle.net/1885/79888; https://openresearch-repository.anu.edu.au/bitstream/1885/79888/5/Caroff_Critical_thickness_for_InAs_quantum_dot_formation.pdf.jpg; https://openresearch-repository.anu.edu.au/bitstream/1885/79888/7/01_Caroff_Critical_thickness_for_InAs_2009.pdf.jpg |
| DOI: |
10.1016/j.jcrysgro.2009.02.048 |
| الاتاحة: |
http://hdl.handle.net/1885/79888
https://doi.org/10.1016/j.jcrysgro.2009.02.048
https://openresearch-repository.anu.edu.au/bitstream/1885/79888/5/Caroff_Critical_thickness_for_InAs_quantum_dot_formation.pdf.jpg
https://openresearch-repository.anu.edu.au/bitstream/1885/79888/7/01_Caroff_Critical_thickness_for_InAs_2009.pdf.jpg |
| رقم الانضمام: |
edsbas.487C7CA3 |
| قاعدة البيانات: |
BASE |
