التفاصيل البيبلوغرافية
| العنوان: |
Structural Property Study for GeSn Thin Films |
| المؤلفون: |
Liyao Zhang, Yuxin Song, Nils von den Driesch, Zhenpu Zhang, Dan Buca, Detlev Grützmacher, Shumin Wang |
| المصدر: |
Materials; Volume 13; Issue 16; Pages: 3645 |
| بيانات النشر: |
Multidisciplinary Digital Publishing Institute |
| سنة النشر: |
2020 |
| المجموعة: |
MDPI Open Access Publishing |
| مصطلحات موضوعية: |
GeSn, structural property, XRD |
| الوصف: |
The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE. |
| نوع الوثيقة: |
text |
| وصف الملف: |
application/pdf |
| اللغة: |
English |
| Relation: |
https://dx.doi.org/10.3390/ma13163645 |
| DOI: |
10.3390/ma13163645 |
| الاتاحة: |
https://doi.org/10.3390/ma13163645 |
| Rights: |
https://creativecommons.org/licenses/by/4.0/ |
| رقم الانضمام: |
edsbas.47CD0AA7 |
| قاعدة البيانات: |
BASE |