Conference
Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base
العنوان: | Improvement of CBE grown InGaAs/InP HBT's using a carbon doped and compositionally graded base |
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المؤلفون: | Benchimol, J.L., Mba, J., Duchenois, A.R., Berdaguer, P., Sermage, B., Le Roux, G., Blayac, S., Riet, M., Thuret, J., Gonzalez, C., Andre, P. |
المصدر: | Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362) ; page 559-562 |
بيانات النشر: | IEEE |
سنة النشر: | 2003 |
نوع الوثيقة: | conference object |
اللغة: | unknown |
DOI: | 10.1109/iciprm.1999.773756 |
الاتاحة: | http://dx.doi.org/10.1109/iciprm.1999.773756 http://xplorestaging.ieee.org/ielx5/6269/16744/00773756.pdf?arnumber=773756 |
رقم الانضمام: | edsbas.45C46E19 |
قاعدة البيانات: | BASE |
DOI: | 10.1109/iciprm.1999.773756 |
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