التفاصيل البيبلوغرافية
| العنوان: |
A High-voltage Floating Level Shifter for a Multi-stage Charge-pump in a Standard 1.8 V/3.3 V CMOS Process |
| المؤلفون: |
Palomeque Mangut, David, Rodríguez Vázquez, Ángel Benito, Delgado Restituto, Manuel |
| المساهمون: |
Universidad de Sevilla. Departamento de Electrónica y Electromagnetismo |
| بيانات النشر: |
Elsevier |
| سنة النشر: |
2024 |
| المجموعة: |
idUS - Deposito de Investigación Universidad de Sevilla |
| مصطلحات موضوعية: |
Level shifter, Gate driver, CMOS, Charge pump, High-voltage compliance |
| الوصف: |
This paper proposes a high-voltage floating level shifter with a periodically-refreshed charge pump topology. Designed and fabricated in a standard 1.8 V/3.3 V CMOS process, the circuit can withstand shifting voltages from 3 V to 8.5 V with a delay response of 1.8 ns and occupies 0.008 mm2. The proposed circuit has been used in a multi-stage charge pump for programming its voltage conversion ratio. Experimental results show that the level shifters successfully enable/disable the stages of the charge pump, thus modifying its output voltage between 5.35 V and 12.4 V for an output current of 3 mA. |
| نوع الوثيقة: |
article in journal/newspaper |
| اللغة: |
English |
| Relation: |
AEU - International Journal of Electronics and Communications, 156, 154389.; https://doi.org/10.1016/j.aeue.2022.154389; https://idus.us.es/handle//11441/161767 |
| الاتاحة: |
https://idus.us.es/handle//11441/161767 |
| Rights: |
Attribution-NonCommercial-NoDerivatives 4.0 Internacional ; http://creativecommons.org/licenses/by-nc-nd/4.0/ ; info:eu-repo/semantics/openAccess |
| رقم الانضمام: |
edsbas.41CE530B |
| قاعدة البيانات: |
BASE |