Academic Journal
Properties of boron-doped (113) oriented homoepitaxial diamond layers
| العنوان: | Properties of boron-doped (113) oriented homoepitaxial diamond layers |
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| المؤلفون: | Mortet V., Taylor A., Lambert N., Gedeonová Z., Fekete L., Lorinčík J., Klimša L., Kopeček J., Hubík P., Šobáň Z., Laposa A., Davydova M., Voves J., Pošta A., Povolný V., Hazdra P. |
| بيانات النشر: | Elsevier Science |
| سنة النشر: | 2021 |
| المجموعة: | Czech Technical University in Prague: Digital Library / České vysoké učení technické v Praze: Digitální knihovna ČVUT |
| مصطلحات موضوعية: | Boron-doped diamond, Electrical properties, (113) oriented epitaxial diamond |
| الوصف: | Although significant efforts have been dedicated to optimize the quality of epitaxial diamond layers, reported properties of diamond based electronic devices do not yet approach expected theoretical values. Recent works indicate that boron-doped and phosphorous-doped diamond can be grown on atomically stepped (113) surfaces (A. Tallaire et al., 2016; M.-A. Pinault-Thaury et al., 2019), however the electrical properties of these layers have not been studied in detail. In this work, we report on structural and electrical properties of boron-doped epitaxial diamond layers grown on (113) substrates. Properties of the diamond layers have been investigated by means of scanning electron microscopy, atomic force microscopy, Hall effect, secondary ion mass spectrometry and Raman spectroscopy. Our results show that boron-doped diamond layers can be grown on (113) substrates at high deposition rates with atomically flat surfaces, excellent electrical properties and high boron incorporation efficiency. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| Relation: | Diamond and Related Materials; https://www.sciencedirect.com/science/article/pii/S0925963520307780; info:eu-repo/grantAgreement/Czech Science Foundation/GA/GA20-11140S/CZ/Essential Elements of Diamond Power Electronics/; http://hdl.handle.net/10467/92339; 000612811800009 |
| DOI: | 10.1016/j.diamond.2020.108223 |
| الاتاحة: | http://hdl.handle.net/10467/92339 https://doi.org/10.1016/j.diamond.2020.108223 |
| Rights: | closedAccess |
| رقم الانضمام: | edsbas.4145175A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1016/j.diamond.2020.108223 |
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