Academic Journal
Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
العنوان: | Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing |
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المؤلفون: | Shang, Z. W., Ma, J., Liu, W. D., Fan, Y. C., Hsu, H. H., Zheng, Z. W., Cheng, C. H. |
المساهمون: | National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities |
المصدر: | IEEE Journal of the Electron Devices Society ; volume 8, page 485-489 ; ISSN 2168-6734 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
سنة النشر: | 2020 |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | unknown |
DOI: | 10.1109/jeds.2020.2986172 |
الاتاحة: | http://dx.doi.org/10.1109/jeds.2020.2986172 http://xplorestaging.ieee.org/ielx7/6245494/8949832/09060932.pdf?arnumber=9060932 |
Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
رقم الانضمام: | edsbas.3F513F7A |
قاعدة البيانات: | BASE |
DOI: | 10.1109/jeds.2020.2986172 |
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