Academic Journal

Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing

التفاصيل البيبلوغرافية
العنوان: Performance Investigation of an n-Type Tin-Oxide Thin Film Transistor by Channel Plasma Processing
المؤلفون: Shang, Z. W., Ma, J., Liu, W. D., Fan, Y. C., Hsu, H. H., Zheng, Z. W., Cheng, C. H.
المساهمون: National Natural Science Foundation of China, Fundamental Research Funds for the Central Universities
المصدر: IEEE Journal of the Electron Devices Society ; volume 8, page 485-489 ; ISSN 2168-6734
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE)
سنة النشر: 2020
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1109/jeds.2020.2986172
الاتاحة: http://dx.doi.org/10.1109/jeds.2020.2986172
http://xplorestaging.ieee.org/ielx7/6245494/8949832/09060932.pdf?arnumber=9060932
Rights: https://creativecommons.org/licenses/by/4.0/legalcode
رقم الانضمام: edsbas.3F513F7A
قاعدة البيانات: BASE
الوصف
DOI:10.1109/jeds.2020.2986172