Academic Journal

Effect of Si doping and applied pressure upon magnetostructural properties of Tb(5)(Si(x)Ge(1-x))(4) magnetocaloric compounds

التفاصيل البيبلوغرافية
العنوان: Effect of Si doping and applied pressure upon magnetostructural properties of Tb(5)(Si(x)Ge(1-x))(4) magnetocaloric compounds
المؤلفون: Tseng, Yuan-Chieh, Ma, Hao-Jhong, Yang, Chao-Yao, Mudryk, Yaroslav, Pecharsky, Vitalij K., Gschneidner, Karl A., Jr., Souza-Neto, Narcizo M., Haskel, Daniel
المساهمون: 材料科學與工程學系, Department of Materials Science and Engineering
سنة النشر: 2011
المجموعة: National Chiao Tung University: NCTU Institutional Repository / 國立交通大學機構典藏
الوصف: The composition-and pressure-dependent magnetostructural properties of Tb(5)(Si(x)Ge(1-x))(4) (x = 0.4, 0.485, 0.625, and 0.7) were investigated using x-ray powder diffraction and x-ray magnetic circular dichroism in a diamond anvil cell, respectively. Substituting the smaller-size Si for Ge stabilizes a single-phase, ferromagnetic (FM) orthorhombic O(I) structure for x >= 0.7. Similarly, application of external pressure causes a canted antiferromagnetic orthorhombic O(II) sample (x=0.4) to transform into an FMO(I) phase at 4 GPa. The element- and orbital-specific x-ray absorption data indicate that the Tb 4f orbital occupation changes with external pressure, likely through 4f-5d electronic mixing, yet no changes in Tb 4f electronic structure are observed with Si doping. The results point to different mechanisms behind the enhancement of FM exchange interactions in Tb(5)(Si(x)Ge(1-x))(4) with chemical and applied pressure, respectively.
نوع الوثيقة: article in journal/newspaper
اللغة: English
تدمد: 1098-0121
Relation: http://dx.doi.org/10.1103/PhysRevB.83.104419; http://hdl.handle.net/11536/9128; PHYSICAL REVIEW B
DOI: 10.1103/PhysRevB.83.104419
الاتاحة: http://hdl.handle.net/11536/9128
https://doi.org/10.1103/PhysRevB.83.104419
رقم الانضمام: edsbas.3950D8A
قاعدة البيانات: BASE
الوصف
تدمد:10980121
DOI:10.1103/PhysRevB.83.104419