التفاصيل البيبلوغرافية
| العنوان: |
Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures |
| المؤلفون: |
Yuan HR, Lu DC, Liu XL, Han PD, Wang XH, Wang D, Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China. |
| بيانات النشر: |
INST PURE APPLIED PHYSICS |
| سنة النشر: |
2000 |
| المجموعة: |
Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库 |
| مصطلحات موضوعية: |
Algan/gan Heterostructures, In-doping, 2deg, Electron Sheet Density, X-ray Diffraction, Etching, Chemical-vapor-deposition, Molecular-beam Epitaxy, Phase Epitaxy, Mobility, Growth, Films, 半导体物理, electron gas, x-ray crystallography, aggressiveness, chemical vapor deposition, atomic layer deposition, vapor-plating, migration, internal, development, photography--films, finite volume method, 电子气, fermi gas, hole gas, luttinger liquid, rpa calculations, random phase approximation |
| الوصف: |
Indium (In)-doping was applied in GaN layers during growth of AlGaN/GaN heterostructure with unintentionally doped or modulation Si-doped AlGaN layers. It was found that In-doping was effective in improving electron sheet density of two-dimensional-electron-gas (2DEG) in the heterostructures. Furthermore, In-doping also improved mobility in heterostructures with Si modulation-doped in AlGaN layers. The possible reasons were discussed. X-ray diffraction (XRD) and wet chemical etching revealed that crystalline quality of GaN was improved by In-doping. It was proposed that In-doping modified growth kinetics of GaN. |
| نوع الوثيقة: |
other/unknown material |
| اللغة: |
English |
| Relation: |
PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1; Yuan HR; Lu DC; Liu XL; Han PD; Wang XH; Wang D .Indium-doping enhanced two-dimensional-electron-gas performance in AlGaN/GaN heterostructures .见：INST PURE APPLIED PHYSICS .PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 1,DAINI TOYOKAIJI BLDG 24-8 SHINBASHI 4 CHOME, TOKYO, 105-0004, JAPAN ,2000,923-926; http://ir.semi.ac.cn/handle/172111/13745 |
| الاتاحة: |
http://ir.semi.ac.cn/handle/172111/13745 |
| رقم الانضمام: |
edsbas.381CA058 |
| قاعدة البيانات: |
BASE |