Academic Journal

MOCVD of ZnO Films from Bis(Ketoiminato)Zn(II) Precursors: Structure, Morphology and Optical Properties

التفاصيل البيبلوغرافية
العنوان: MOCVD of ZnO Films from Bis(Ketoiminato)Zn(II) Precursors: Structure, Morphology and Optical Properties
المؤلفون: BEKERMANN, DANIELA, MACCATO, CHIARA, GASPAROTTO, ALBERTO, TONDELLO, EUGENIO, LUDWIG A, TOADER T, BARRECA D, BOCK C, WIECK AD, KUNZE U, FISCHER RA, DEVI A.
المساهمون: Bekermann, Daniela, Ludwig, A, Toader, T, Maccato, Chiara, Barreca, D, Gasparotto, Alberto, Bock, C, Wieck, Ad, Kunze, U, Tondello, Eugenio, Fischer, Ra, Devi, A.
سنة النشر: 2011
المجموعة: Padua Research Archive (IRIS - Università degli Studi di Padova)
الوصف: Two closely related bis(ketoiminato) zinc precursors, which are air stable and possess favorable properties for metal-organic (MO)CVD, are successfully employed for the growth of ZnO films on silicon and borosilicate glass substrates at temperatures between 400 and 700°C. The as-deposited films are investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), nuclear reaction analysis (NRA), as well as by UV-vis absorption spectroscopy and photoluminescence (PL) measurements. The structure, morphology, and composition of the as-grown films show a strong dependence on the substrate temperature. The formation of pure and (001)-oriented wurtzite-type stoichiometric ZnO is observed. PL measurements are performed both at room temperature and 77 K, revealing a defect-free emission of ZnO films.
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
Relation: info:eu-repo/semantics/altIdentifier/wos/WOS:000292196600014; volume:17; firstpage:155; lastpage:161; journal:CHEMICAL VAPOR DEPOSITION; http://hdl.handle.net/11577/2433931; info:eu-repo/semantics/altIdentifier/scopus/2-s2.0-79958104448
DOI: 10.1002/cvde.201006898
الاتاحة: http://hdl.handle.net/11577/2433931
https://doi.org/10.1002/cvde.201006898
رقم الانضمام: edsbas.381B7DF9
قاعدة البيانات: BASE