Academic Journal
Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes
| العنوان: | Study of a Silicon Carbide MOSFET Power Module to Establish the Benefits of Adding Anti-parallel Schottky Diodes |
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| المؤلفون: | Trentin, Andrew, Hind, David, Degano, Marco, Tighe, Christopher, Arevalo, Saul Lopez, Yang, Li, Johnson, Mark, Wheeler, Pat, Gerada, Christopher, Harris, Anne, Packwood, Matthew |
| بيانات النشر: | Institute of Electrical and Electronics Engineers |
| سنة النشر: | 2018 |
| المجموعة: | University of Nottingham: Repository@Nottingham |
| الوصف: | The majority of commercial Silicon Carbide (SiC) MOSFET based power modules available on the market today also include SiC Schottky diodes placed in anti-parallel with the MOSFETs. Using an accurate electrical and thermal simulation model this paper analyses the difference between two power modules; one with anti-parallel SiC Schottky diodes and one without for different load conditions in a specific drive application. The main objective of this paper is to explain the advantages and disadvantages of using anti-parallel SiC Schottky diodes with SiC MOSFETs. Experimental results are also presented to validate the simulation results. |
| نوع الوثيقة: | text |
| اللغة: | English |
| ردمك: | 978-1-4799-7313-2 1-4799-7313-0 |
| Relation: | https://nottingham-repository.worktribe.com/output/1530265; Pagination 1829-1836 |
| DOI: | 10.1109/ECCE.2018.8557415 |
| الاتاحة: | https://doi.org/10.1109/ECCE.2018.8557415 https://nottingham-repository.worktribe.com/file/1530265/1/Study%20Of%20A%20Silicon%20Carbide%20MOSFET%20Power%20Module%20To%20Establish%20The%20Benefits%20Of%20Adding%20Anti-parallel%20Schottky%20Diodes https://nottingham-repository.worktribe.com/output/1530265 |
| Rights: | openAccess |
| رقم الانضمام: | edsbas.377247A2 |
| قاعدة البيانات: | BASE |
| ردمك: | 9781479973132 1479973130 |
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| DOI: | 10.1109/ECCE.2018.8557415 |