Academic Journal
Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts
| العنوان: | Fabrication and characterisation of gallium arsenide ambipolar quantum point contacts |
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| المؤلفون: | CHEN, JCH, KLOCHAN, O, MICOLICH, AP, DAS GUPTA, K, SFIGAKIS, F, RITCHIE, DA, TRUNOV, K, REUTER, D, WIECK, AD, HAMILTON, AR |
| بيانات النشر: | AMER INST PHYSICS |
| سنة النشر: | 2015 |
| مصطلحات موضوعية: | Transport, Holes, Gaas, Dots |
| الوصف: | We show that ballistic one-dimensional channels can be formed in an ambipolar device fabricated on a high mobility Al0.34Ga0.66As/GaAs heterostructure. Both electron and hole quantised conductances can be measured in the same one-dimensional channel. We have used this device to compare directly the subband spacings of the two charge carriers in the same confining potential and used this to compare the electron and hole effective masses. (c) 2015 AIP Publishing LLC. |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0003-6951 1077-3118 |
| Relation: | APPLIED PHYSICS LETTERS, 106(18); http://dx.doi.org/10.1063/1.4918934; http://dspace.library.iitb.ac.in/jspui/handle/100/18077 |
| DOI: | 10.1063/1.4918934 |
| الاتاحة: | http://dspace.library.iitb.ac.in/jspui/handle/100/18077 https://doi.org/10.1063/1.4918934 |
| رقم الانضمام: | edsbas.372E6837 |
| قاعدة البيانات: | BASE |
| تدمد: | 00036951 10773118 |
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| DOI: | 10.1063/1.4918934 |