High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission

التفاصيل البيبلوغرافية
العنوان: High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission
المؤلفون: Wang, HL, Yu, HY, Zhou, XL, Kan, Q, Yuan, LJ, Chen, WX, Wang, W, Ding, Y, Pan, JQ
سنة النشر: 2014
المجموعة: Institute of Semiconductors: SEMI OpenIR (Chinese Academy of Sciences) / 中国科学院半导体研究所机构知识库
مصطلحات موضوعية: 半导体材料
نوع الوثيقة: report
اللغة: English
Relation: APPLIED PHYSICS LETTERS; Wang, HL; Yu, HY; Zhou, XL; Kan, Q; Yuan, LJ; Chen, WX; Wang, W; Ding, Y; Pan, JQ.High-power InGaAs/GaAs quantum-well laser with enhanced broad spectrum of stimulated emission.APPLIED PHYSICS LETTERS,2014,105(14):141101; http://ir.semi.ac.cn/handle/172111/26111
الاتاحة: http://ir.semi.ac.cn/handle/172111/26111
رقم الانضمام: edsbas.36F56654
قاعدة البيانات: BASE