Academic Journal

Ion Beam Modification of ZnO Epilayers: Sequential Processing

التفاصيل البيبلوغرافية
العنوان: Ion Beam Modification of ZnO Epilayers: Sequential Processing
المؤلفون: Turos, Andrzej, Ratajczak, Renata, Mieszczynski, Cyprian, Jozwik, Przemyslaw, Stonert, Anna, Prucnal, Slawomir, Heller, Rene, Skorupa, Wolfgang, von Borany, Johannes, Guziewicz, Elzbieta
المساهمون: Polish National Centre for Research and Development, Polish Ministry of Science and Higher Education, Helmholtz Zentrum Dresden-Rossendorf (HZDR)
المصدر: physica status solidi (a) ; volume 215, issue 16 ; ISSN 1862-6300 1862-6319
بيانات النشر: Wiley
سنة النشر: 2018
المجموعة: Wiley Online Library (Open Access Articles via Crossref)
الوصف: Defect agglomeration in ion‐implanted compound semiconductors produces lattice stress eventually causing plastic deformation at sufficiently high fluence. Consequently, a dislocations tangle is formed which can hardly be completely removed by thermal annealing. To solve this problem, a new method of sequential processing has been developed consisting of low fluence ion implantation followed by subsequent annealing. The procedure can be then repeated until the required impurity concentration has been reached without producing excessive damage. Epitaxial ZnO layers are grown using the atomic layer deposition (ALD) technique. Structural changes in ZnO epilayers due to Yb‐ion implantation and subsequent annealing are analyzed by Rutherford backscattering/channeling (RBS/c) and photoluminescence (PL). Correlation between defect transformations and PL efficiency is determined. Increased Yb‐atom optical activation upon sequential processing as compared to the standard single‐step annealing is observed.
نوع الوثيقة: article in journal/newspaper
اللغة: English
DOI: 10.1002/pssa.201700887
الاتاحة: http://dx.doi.org/10.1002/pssa.201700887
https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssa.201700887
https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700887
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رقم الانضمام: edsbas.35AEFB7
قاعدة البيانات: BASE