Dissertation/ Thesis
Design, Modeling, Fabrication, Characterization and Applications of very Wideband Semiconductor Optical Amplifiers ; Modélisation, conception, fabrication, caractérisation et valorisation d'amplificateurs optiques à semiconducteur de très large bande spectrale
| العنوان: | Design, Modeling, Fabrication, Characterization and Applications of very Wideband Semiconductor Optical Amplifiers ; Modélisation, conception, fabrication, caractérisation et valorisation d'amplificateurs optiques à semiconducteur de très large bande spectrale |
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| المؤلفون: | Verdier, Agnes |
| المساهمون: | Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie - CNRS Chimie (INC-CNRS)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Alcatel-Thales III-V Lab (III-V Lab), THALES France, INSA de Toulouse, Hélène Carrère |
| المصدر: | https://theses.hal.science/tel-03578670 ; Optics [physics.optics]. INSA de Toulouse, 2018. English. ⟨NNT : 2018ISAT0051⟩. |
| بيانات النشر: | HAL CCSD |
| سنة النشر: | 2018 |
| المجموعة: | Université Toulouse III - Paul Sabatier: HAL-UPS |
| مصطلحات موضوعية: | Semiconductor Optical Amplifiers, SOA, Wideband, Large Optical Bandwidth, Tunable Laser, Photonic Integrated Circuit, PIC, Noise Figure, NF, Saturation Output Power, High Power, Optical Confinement, Asymmetric Cladding, Wavelength Division Multiplexing, WDM, Amplificateur Optique à Semiconducteur, Large Bande Spectrale, Laser Accordable, Circuit photonique intégré, Figure de Bruit, Puissance de Saturation, Forte Puissance, Confinement Optique, [PHYS.PHYS.PHYS-OPTICS]Physics [physics]/Physics [physics]/Optics [physics.optics] |
| الوصف: | Optical networks are constantly evolving toward higher transmission rates in optical fiber. However in the past few years optical fiber spectral efficiency seems to be reaching its upper limit. Best solution to keep increasing data rates consists then in increasing spectral bandwidth used in optical fibers, currently limited to 35 nm due to restricted bandwidth of erbium-doped fiber amplifiers (EDFAs) used for in-line amplification. Previous studies have been conducted to evaluate whether semiconductor optical amplifiers (SOAs) could replace EDFAs and offer an extended bandwidth. Promising results have been obtained but blocking points have also been identified regarding SOAs saturation output power and noise figure. During the thesis we have developed solutions to these issues to make use of SOAs a realistic option.Beginning of the thesis was dedicated to design of wideband SOAs consisting of material simulations at LPCNO to understand and optimize active structure of the amplifiers. This study was completed by optical simulations at III-V Lab in order to integrate an asymmetric cladding to the SOA for increased saturation output power and lower noise. Different chip geometries were also proposed for improved performances. These designs were fabricated and characterized at III-V Lab.Resulting SOAs have demonstrated a spectral bandwidth of 120 nm in S+C+L band with optical gain within 3 dB of 18.5dB maximal value. Chip optical far-field is quasi-circular with full-width at half maximum divergence angle as low as 17° which greatly participated in reducing coupling losses. In module, we obtained saturation output power of 23 dBm at 25°C. Improvement of noise figure is also visible as it reaches 4 dB in L-band. Several applications using our SOAs have already been tested notably as repeater in longhaul optical communications with great results. They have also been integrated to tunable external cavity lasers where their wide gain bandwidth has permitted record tuning range. These lasers also showed record narrow ... |
| نوع الوثيقة: | doctoral or postdoctoral thesis |
| اللغة: | English |
| Relation: | NNT: 2018ISAT0051; tel-03578670; https://theses.hal.science/tel-03578670; https://theses.hal.science/tel-03578670/document; https://theses.hal.science/tel-03578670/file/2018AgnesVerdier.pdf |
| الاتاحة: | https://theses.hal.science/tel-03578670 https://theses.hal.science/tel-03578670/document https://theses.hal.science/tel-03578670/file/2018AgnesVerdier.pdf |
| Rights: | info:eu-repo/semantics/OpenAccess |
| رقم الانضمام: | edsbas.34F1CE99 |
| قاعدة البيانات: | BASE |
| الوصف غير متاح. |