Conference
Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
العنوان: | Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs |
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المؤلفون: | Lakrimi, M, Rehman, J, Symons, D, Nicholas, R, Mason, N, Walker, P |
سنة النشر: | 2016 |
المجموعة: | Oxford University Research Archive (ORA) |
الوصف: | We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minigap. (C) 1998 Elsevier Science B.V. All rights reserved. |
نوع الوثيقة: | conference object |
اللغة: | unknown |
Relation: | https://ora.ox.ac.uk/objects/uuid:65b2659c-d540-488f-94ca-6f697c6aa450; https://doi.org/10.1016/S0921-4526(98)00496-7 |
DOI: | 10.1016/S0921-4526(98)00496-7 |
الاتاحة: | https://doi.org/10.1016/S0921-4526(98)00496-7 https://ora.ox.ac.uk/objects/uuid:65b2659c-d540-488f-94ca-6f697c6aa450 |
Rights: | info:eu-repo/semantics/embargoedAccess |
رقم الانضمام: | edsbas.345E921D |
قاعدة البيانات: | BASE |
DOI: | 10.1016/S0921-4526(98)00496-7 |
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