Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs

التفاصيل البيبلوغرافية
العنوان: Perpendicular and parallel magnetic field transport measurements in gated InAs/GaSb DHETs
المؤلفون: Lakrimi, M, Rehman, J, Symons, D, Nicholas, R, Mason, N, Walker, P
سنة النشر: 2016
المجموعة: Oxford University Research Archive (ORA)
الوصف: We have performed a magnetotransport study in both perpendicular and parallel magnetic fields for gated InAs/GaSb double heterostructures. These measurements provide a further proof for the existence of a minigap at the anti-crossing point between the electron and hole dispersion relations in this system. When a parallel magnetic field is increased from 0 to 12 T, the resistivity drops by 60% when the Fermi energy is in the middle of the minigap, but by less ;than 3% when the Fermi energy is positioned outside the minigap. (C) 1998 Elsevier Science B.V. All rights reserved.
نوع الوثيقة: conference object
اللغة: unknown
Relation: https://ora.ox.ac.uk/objects/uuid:65b2659c-d540-488f-94ca-6f697c6aa450; https://doi.org/10.1016/S0921-4526(98)00496-7
DOI: 10.1016/S0921-4526(98)00496-7
الاتاحة: https://doi.org/10.1016/S0921-4526(98)00496-7
https://ora.ox.ac.uk/objects/uuid:65b2659c-d540-488f-94ca-6f697c6aa450
Rights: info:eu-repo/semantics/embargoedAccess
رقم الانضمام: edsbas.345E921D
قاعدة البيانات: BASE
الوصف
DOI:10.1016/S0921-4526(98)00496-7