Academic Journal
Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs
| العنوان: | Interfacial-layer-driven dielectric degradation and breakdown of HfSiON/SiON gate dielectric nMOSFETs |
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| المؤلفون: | Choi, DY, Lee, KT, Baek, CK, Sohn, CW, Sagong, HC, Jung, EY, Lee, JS, Jeong, YH |
| المساهمون: | 창의IT융합공학과, 10644344, Baek, CK, Lee, JS, Jeong, YH |
| بيانات النشر: | IEEE |
| سنة النشر: | 2011 |
| المجموعة: | Pohang University of Science and Technology (POSTECH): Open Access System for Information Sharing (OASIS) |
| مصطلحات موضوعية: | HfSiON, high-k dielectric, interfacial layer (IL), positive bias temperature instability (BTI) (PBTI), reliability, SiON, stress-induced leakage current (SILC), time-dependent dielectric breakdown (TDDB) |
| الوصف: | This letter describes the dielectric degradation and breakdown characteristics of HfSiON/SiON gate dielectric nMOSFETs using the stress-induced leakage current (SILC) analysis. The nMOSFETs show progressive breakdown (PBD) under substrate injection stress, and its characteristic changes as the stress voltage increases, from slow PBD (s-PBD) only, then to a combination of s-PBD and fast PBD (f-PBD), and finally to f-PBD only. It is found that the SILC of nMOSFETs is caused by trap-assisted tunneling mainly through the preexisting deep traps of the high-k layer and the stress-induced traps of the interfacial layer (IL). The stress-induced defects under substrate injection stress are generated within the IL rather than the high-k layer, and the time-dependent dielectric breakdown of the nMOSFETs is driven by the degradation of the IL. ; X ; 1 ; 1 ; 6 ; 7 ; scie ; scopus |
| نوع الوثيقة: | article in journal/newspaper |
| اللغة: | English |
| تدمد: | 0741-3106 |
| Relation: | IEEE ELECTRON DEVICE LETTERS; 32; 10; 1319; 1321; SCI급, SCOPUS 등재논문; SCI; Engineering, Electrical & Electronic; Engineering; 2011-OAK-0000029380; https://oasis.postech.ac.kr/handle/2014.oak/14742; 12844; IEEE ELECTRON DEVICE LETTERS, v.32, no.10, pp.1319 - 1321; 000295340300001; 2-s2.0-80053565169 |
| DOI: | 10.1109/LED.2011.2161861 |
| الاتاحة: | https://oasis.postech.ac.kr/handle/2014.oak/14742 https://doi.org/10.1109/LED.2011.2161861 |
| رقم الانضمام: | edsbas.3451CC56 |
| قاعدة البيانات: | BASE |
| تدمد: | 07413106 |
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| DOI: | 10.1109/LED.2011.2161861 |