Academic Journal

Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

التفاصيل البيبلوغرافية
العنوان: Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
المؤلفون: Greco, G., Fiorenza, P., Giannazzo, F., Vivona, M., Venuto, C., Iucolano, F., Roccaforte, F.
المساهمون: Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) through the European Project Gallium Nitride for Advanced Power Applications
المصدر: IEEE Electron Device Letters ; volume 45, issue 10, page 1724-1727 ; ISSN 0741-3106 1558-0563
بيانات النشر: Institute of Electrical and Electronics Engineers (IEEE)
سنة النشر: 2024
نوع الوثيقة: article in journal/newspaper
اللغة: unknown
DOI: 10.1109/led.2024.3438807
الاتاحة: http://dx.doi.org/10.1109/led.2024.3438807
http://xplorestaging.ieee.org/ielx8/55/10701574/10623468.pdf?arnumber=10623468
Rights: https://creativecommons.org/licenses/by/4.0/legalcode
رقم الانضمام: edsbas.30A160B2
قاعدة البيانات: BASE
الوصف
DOI:10.1109/led.2024.3438807