Academic Journal
Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs
العنوان: | Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs |
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المؤلفون: | Greco, G., Fiorenza, P., Giannazzo, F., Vivona, M., Venuto, C., Iucolano, F., Roccaforte, F. |
المساهمون: | Electronic Component Systems for European Leadership Joint Undertaking (ECSEL JU) through the European Project Gallium Nitride for Advanced Power Applications |
المصدر: | IEEE Electron Device Letters ; volume 45, issue 10, page 1724-1727 ; ISSN 0741-3106 1558-0563 |
بيانات النشر: | Institute of Electrical and Electronics Engineers (IEEE) |
سنة النشر: | 2024 |
نوع الوثيقة: | article in journal/newspaper |
اللغة: | unknown |
DOI: | 10.1109/led.2024.3438807 |
الاتاحة: | http://dx.doi.org/10.1109/led.2024.3438807 http://xplorestaging.ieee.org/ielx8/55/10701574/10623468.pdf?arnumber=10623468 |
Rights: | https://creativecommons.org/licenses/by/4.0/legalcode |
رقم الانضمام: | edsbas.30A160B2 |
قاعدة البيانات: | BASE |
DOI: | 10.1109/led.2024.3438807 |
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