Academic Journal
Doubling the mobility of InAs/InGaAs selective area grown nanowires
| العنوان: | Doubling the mobility of InAs/InGaAs selective area grown nanowires |
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| المؤلفون: | Beznasiuk, Daria, Marti-Sanchez, Sara, Kang, Jung-Hyun, Tanta, Rawa, Stankevic, Tomas, Rajpalke, Mohana, Christensen, Anna Wulff, Spadaro, Maria Chiara, Bergamaschini, Roberto, Maka, Nikhil N., Petersen, Christian Emanuel N., Carrad, Damon J., Jespersen, Thomas Sand, Arbiol, Jordi, Krogstrup, Peter |
| المصدر: | Beznasiuk , D , Marti-Sanchez , S , Kang , J-H , Tanta , R , Stankevic , T , Rajpalke , M , Christensen , A W , Spadaro , M C , Bergamaschini , R , Maka , N N , Petersen , C E N , Carrad , D J , Jespersen , T S , Arbiol , J & Krogstrup , P 2022 , ' Doubling the mobility of InAs/InGaAs selective area grown nanowires ' , Physical Review Materials , vol. 6 , no. 3 , 034602 . https://doi.org/10.1103/PhysRevMaterials.6.034602 |
| سنة النشر: | 2022 |
| المجموعة: | University of Copenhagen: Research / Forskning ved Københavns Universitet |
| مصطلحات موضوعية: | MOLECULAR-BEAM EPITAXY, ELECTRONIC-PROPERTIES, ALLOY SCATTERING, GAAS, DESORPTION, OXIDE, SEGREGATION, SUBSTRATE, SURFACES, GE |
| الوصف: | Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm(2) V-1 s(-1). This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures. |
| نوع الوثيقة: | article in journal/newspaper |
| وصف الملف: | application/pdf |
| اللغة: | English |
| DOI: | 10.1103/PhysRevMaterials.6.034602 |
| الاتاحة: | https://researchprofiles.ku.dk/da/publications/doubling-the-mobility-of-inasingaas-selective-area-grown-nanowires(a86fa28b-0605-4627-ac50-203641af96c6).html https://doi.org/10.1103/PhysRevMaterials.6.034602 https://curis.ku.dk/ws/files/302060665/PhysRevMaterials.6.034602.pdf https://arxiv.org/pdf/2103.15971.pdf |
| Rights: | info:eu-repo/semantics/openAccess |
| رقم الانضمام: | edsbas.2FED010A |
| قاعدة البيانات: | BASE |
| DOI: | 10.1103/PhysRevMaterials.6.034602 |
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